Role of structural defects in the unipolar resistive switching characteristics of PtNiOPt structures

Chanwoo Park, Sang Ho Jeon, Seung Chul Chae, Seungwu Han, Bae Ho Park, Sunae Seo, Dong Wook Kim

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Abstract

We investigated the resistive switching characteristics of two types of PtNiOPt structures with epitaxial and polycrystalline NiO layers. Both of these PtNiOPt structures exhibited unipolar resistive switching. Pt/epitaxial- NiOPt showed unstable switching or no resistance state change after several repeated runs. Pt/polycrystalline- NiOPt showed very reproducible switching. The experimental data indicated that microstructural defects (e.g., grain boundaries) played crucial roles in the reliability of the unipolar resistive switching behavior. This was further supported by first-principles calculations.

Original languageEnglish
Article number042102
JournalApplied Physics Letters
Volume93
Issue number4
DOIs
StatePublished - 2008

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