Role of structural defects in the unipolar resistive switching characteristics of PtNiOPt structures

Chanwoo Park; Sang Ho Jeon; Seung Chul Chae; Seungwu Han; Bae Ho Park; Sunae Seo; Dong Wook Kim

doi:10.1063/1.2963983

Role of structural defects in the unipolar resistive switching characteristics of PtNiOPt structures

Chanwoo Park, Sang Ho Jeon, Seung Chul Chae, Seungwu Han, Bae Ho Park, Sunae Seo, Dong Wook Kim

Department of Physics

Research output: Contribution to journal › Article › peer-review

82 Scopus citations

Abstract

We investigated the resistive switching characteristics of two types of PtNiOPt structures with epitaxial and polycrystalline NiO layers. Both of these PtNiOPt structures exhibited unipolar resistive switching. Pt/epitaxial- NiOPt showed unstable switching or no resistance state change after several repeated runs. Pt/polycrystalline- NiOPt showed very reproducible switching. The experimental data indicated that microstructural defects (e.g., grain boundaries) played crucial roles in the reliability of the unipolar resistive switching behavior. This was further supported by first-principles calculations.

Original language	English
Article number	042102
Journal	Applied Physics Letters
Volume	93
Issue number	4
DOIs	https://doi.org/10.1063/1.2963983
State	Published - 2008

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title = "Role of structural defects in the unipolar resistive switching characteristics of PtNiOPt structures",

abstract = "We investigated the resistive switching characteristics of two types of PtNiOPt structures with epitaxial and polycrystalline NiO layers. Both of these PtNiOPt structures exhibited unipolar resistive switching. Pt/epitaxial- NiOPt showed unstable switching or no resistance state change after several repeated runs. Pt/polycrystalline- NiOPt showed very reproducible switching. The experimental data indicated that microstructural defects (e.g., grain boundaries) played crucial roles in the reliability of the unipolar resistive switching behavior. This was further supported by first-principles calculations.",

author = "Chanwoo Park and Jeon, {Sang Ho} and Chae, {Seung Chul} and Seungwu Han and Park, {Bae Ho} and Sunae Seo and Kim, {Dong Wook}",

note = "Funding Information: This work was supported by the Korea Research Foundation Grant funded by the Korean Government (MOEHRD) (KRF-2007-331-C00083). S.H. and B.H.P. were supported by the National Program for 0.1 Terabit NVM Devices. B.H.P. was also supported by the KOSEF NRL Program grant funded by the Korea government (MEST) (No. R0A-2008-000-20052-0). ",

year = "2008",

doi = "10.1063/1.2963983",

language = "English",

volume = "93",

journal = "Applied Physics Letters",

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TY - JOUR

T1 - Role of structural defects in the unipolar resistive switching characteristics of PtNiOPt structures

AU - Park, Chanwoo

AU - Jeon, Sang Ho

AU - Chae, Seung Chul

AU - Han, Seungwu

AU - Park, Bae Ho

AU - Seo, Sunae

AU - Kim, Dong Wook

N1 - Funding Information: This work was supported by the Korea Research Foundation Grant funded by the Korean Government (MOEHRD) (KRF-2007-331-C00083). S.H. and B.H.P. were supported by the National Program for 0.1 Terabit NVM Devices. B.H.P. was also supported by the KOSEF NRL Program grant funded by the Korea government (MEST) (No. R0A-2008-000-20052-0).

PY - 2008

Y1 - 2008

N2 - We investigated the resistive switching characteristics of two types of PtNiOPt structures with epitaxial and polycrystalline NiO layers. Both of these PtNiOPt structures exhibited unipolar resistive switching. Pt/epitaxial- NiOPt showed unstable switching or no resistance state change after several repeated runs. Pt/polycrystalline- NiOPt showed very reproducible switching. The experimental data indicated that microstructural defects (e.g., grain boundaries) played crucial roles in the reliability of the unipolar resistive switching behavior. This was further supported by first-principles calculations.

AB - We investigated the resistive switching characteristics of two types of PtNiOPt structures with epitaxial and polycrystalline NiO layers. Both of these PtNiOPt structures exhibited unipolar resistive switching. Pt/epitaxial- NiOPt showed unstable switching or no resistance state change after several repeated runs. Pt/polycrystalline- NiOPt showed very reproducible switching. The experimental data indicated that microstructural defects (e.g., grain boundaries) played crucial roles in the reliability of the unipolar resistive switching behavior. This was further supported by first-principles calculations.

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U2 - 10.1063/1.2963983

DO - 10.1063/1.2963983

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JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 4

M1 - 042102

ER -

Role of structural defects in the unipolar resistive switching characteristics of PtNiOPt structures

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