Role of remote interfacial phonons in the resistivity of graphene

Y. G. You; J. H. Ahn; B. H. Park; Y. Kwon; E. E.B. Campbell; S. H. Jhang

doi:10.1063/1.5097043

Role of remote interfacial phonons in the resistivity of graphene

Y. G. You
, J. H. Ahn
, B. H. Park
, Y. Kwon
, E. E.B. Campbell
, S. H. Jhang

Department of Physics

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

Abstract

The temperature (T) dependence of electrical resistivity in graphene has been experimentally investigated between 10 and 400 K for samples prepared on various substrates: HfO₂, SiO₂, and h-BN. The resistivity of graphene shows a linear T-dependence at low T and becomes superlinear above a substrate-dependent transition temperature. The results are explained by remote interfacial phonon scattering by surface optical phonons at the substrates. The use of an appropriate substrate can lead to a significant improvement in the charge transport of graphene.

Original language	English
Article number	043104
Journal	Applied Physics Letters
Volume	115
Issue number	4
DOIs	https://doi.org/10.1063/1.5097043
State	Published - 22 Jul 2019

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@article{1b5941502114457081cfd73d38350105,

title = "Role of remote interfacial phonons in the resistivity of graphene",

abstract = "The temperature (T) dependence of electrical resistivity in graphene has been experimentally investigated between 10 and 400 K for samples prepared on various substrates: HfO2, SiO2, and h-BN. The resistivity of graphene shows a linear T-dependence at low T and becomes superlinear above a substrate-dependent transition temperature. The results are explained by remote interfacial phonon scattering by surface optical phonons at the substrates. The use of an appropriate substrate can lead to a significant improvement in the charge transport of graphene.",

author = "You, \{Y. G.\} and Ahn, \{J. H.\} and Park, \{B. H.\} and Y. Kwon and Campbell, \{E. E.B.\} and Jhang, \{S. H.\}",

note = "Publisher Copyright: {\textcopyright} 2019 Author(s).",

year = "2019",

month = jul,

day = "22",

doi = "10.1063/1.5097043",

language = "English",

volume = "115",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "4",

}

TY - JOUR

T1 - Role of remote interfacial phonons in the resistivity of graphene

AU - You, Y. G.

AU - Ahn, J. H.

AU - Park, B. H.

AU - Kwon, Y.

AU - Campbell, E. E.B.

AU - Jhang, S. H.

PY - 2019/7/22

Y1 - 2019/7/22

N2 - The temperature (T) dependence of electrical resistivity in graphene has been experimentally investigated between 10 and 400 K for samples prepared on various substrates: HfO2, SiO2, and h-BN. The resistivity of graphene shows a linear T-dependence at low T and becomes superlinear above a substrate-dependent transition temperature. The results are explained by remote interfacial phonon scattering by surface optical phonons at the substrates. The use of an appropriate substrate can lead to a significant improvement in the charge transport of graphene.

AB - The temperature (T) dependence of electrical resistivity in graphene has been experimentally investigated between 10 and 400 K for samples prepared on various substrates: HfO2, SiO2, and h-BN. The resistivity of graphene shows a linear T-dependence at low T and becomes superlinear above a substrate-dependent transition temperature. The results are explained by remote interfacial phonon scattering by surface optical phonons at the substrates. The use of an appropriate substrate can lead to a significant improvement in the charge transport of graphene.

UR - https://www.scopus.com/pages/publications/85069893213

U2 - 10.1063/1.5097043

DO - 10.1063/1.5097043

M3 - Article

AN - SCOPUS:85069893213

SN - 0003-6951

VL - 115

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 4

M1 - 043104

ER -

Role of remote interfacial phonons in the resistivity of graphene

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