Abstract
The temperature (T) dependence of electrical resistivity in graphene has been experimentally investigated between 10 and 400 K for samples prepared on various substrates: HfO2, SiO2, and h-BN. The resistivity of graphene shows a linear T-dependence at low T and becomes superlinear above a substrate-dependent transition temperature. The results are explained by remote interfacial phonon scattering by surface optical phonons at the substrates. The use of an appropriate substrate can lead to a significant improvement in the charge transport of graphene.
Original language | English |
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Article number | 043104 |
Journal | Applied Physics Letters |
Volume | 115 |
Issue number | 4 |
DOIs | |
State | Published - 22 Jul 2019 |
Bibliographical note
Publisher Copyright:© 2019 Author(s).