Role of remote interfacial phonons in the resistivity of graphene

Y. G. You, J. H. Ahn, B. H. Park, Y. Kwon, E. E.B. Campbell, S. H. Jhang

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The temperature (T) dependence of electrical resistivity in graphene has been experimentally investigated between 10 and 400 K for samples prepared on various substrates: HfO2, SiO2, and h-BN. The resistivity of graphene shows a linear T-dependence at low T and becomes superlinear above a substrate-dependent transition temperature. The results are explained by remote interfacial phonon scattering by surface optical phonons at the substrates. The use of an appropriate substrate can lead to a significant improvement in the charge transport of graphene.

Original languageEnglish
Article number043104
JournalApplied Physics Letters
Issue number4
StatePublished - 22 Jul 2019

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