Role of Na in solution-processed CuInSe2 (CISe) devices: A different story for improving efficiency

Shanza Rehan; Jihyun Moon; Tae Gun Kim; Jihye Gwak; Juran Kim; Jeong Won Kim; William Jo; Seung Kyu Ahn; Se Jin Ahn

doi:10.1016/j.nanoen.2018.03.065

Role of Na in solution-processed CuInSe₂ (CISe) devices: A different story for improving efficiency

Shanza Rehan, Jihyun Moon, Tae Gun Kim, Jihye Gwak, Juran Kim, Jeong Won Kim, William Jo, Seung Kyu Ahn, Se Jin Ahn

Department of Physics

Research output: Contribution to journal › Article › peer-review

19 Scopus citations

Abstract

Na has been believed to improve the device parameters of open circuit voltage (V_OC) and fill factor (FF) presumably by increasing the carrier concentration (N_A) of vacuum-processed Cu(In,Ga)Se₂ films. In solution-processed CI(G)Se devices as well, Na reportedly increases V_OC and FF but this improvement is not correlated with the increase in N_A, suggesting a different physical mechanism associated with Na in solution-based routes. In this contribution, experimental results on the role of Na addition in solution-processed CISe films and devices were reported, in which Na addition had no influence on N_A nor on film composition in spite of the notable increase in the device efficiency. On the contrary, Na was found to mitigate the interfacial recombination by reducing the undesirable surface defects. Along with this understanding, Na addition in our air-processable route resulted in a CISe device with 12.83% efficiency, which is comparable to the current world record efficiency of solution-processed CISe devices.

Original language	English
Pages (from-to)	401-412
Number of pages	12
Journal	Nano Energy
Volume	48
DOIs	https://doi.org/10.1016/j.nanoen.2018.03.065
State	Published - Jun 2018

Keywords

CuInSe
Defects
Non-vacuum
Recombination
Sodium
Solar cells

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

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10.1016/j.nanoen.2018.03.065

Cite this

@article{fa29656391224a20a7c28512bfc3b076,

title = "Role of Na in solution-processed CuInSe2 (CISe) devices: A different story for improving efficiency",

abstract = "Na has been believed to improve the device parameters of open circuit voltage (VOC) and fill factor (FF) presumably by increasing the carrier concentration (NA) of vacuum-processed Cu(In,Ga)Se2 films. In solution-processed CI(G)Se devices as well, Na reportedly increases VOC and FF but this improvement is not correlated with the increase in NA, suggesting a different physical mechanism associated with Na in solution-based routes. In this contribution, experimental results on the role of Na addition in solution-processed CISe films and devices were reported, in which Na addition had no influence on NA nor on film composition in spite of the notable increase in the device efficiency. On the contrary, Na was found to mitigate the interfacial recombination by reducing the undesirable surface defects. Along with this understanding, Na addition in our air-processable route resulted in a CISe device with 12.83% efficiency, which is comparable to the current world record efficiency of solution-processed CISe devices.",

keywords = "CuInSe, Defects, Non-vacuum, Recombination, Sodium, Solar cells",

author = "Shanza Rehan and Jihyun Moon and Kim, {Tae Gun} and Jihye Gwak and Juran Kim and Kim, {Jeong Won} and William Jo and Ahn, {Seung Kyu} and Ahn, {Se Jin}",

note = "Funding Information: This work was conducted under the framework of the Research and Development Program of the Korea Institute of Energy Research ( B8-2425 ). This work was also supported by the Korea Institute of Energy Technology Evaluation and Planning (KETEP), granted financial resource from the Ministry of Trade, Industry & Energy, Republic of Korea (No. 20163010012430 ) and by the Technology Development Program to Solve Climate Changes of the National Research Foundation (NRF) funded by the Ministry of Science, ICT & Future Planning ( 2016M1A2A2936753 ). Publisher Copyright: {\textcopyright} 2018 Elsevier Ltd",

year = "2018",

month = jun,

doi = "10.1016/j.nanoen.2018.03.065",

language = "English",

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pages = "401--412",

journal = "Nano Energy",

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T1 - Role of Na in solution-processed CuInSe2 (CISe) devices

T2 - A different story for improving efficiency

AU - Rehan, Shanza

AU - Moon, Jihyun

AU - Kim, Tae Gun

AU - Gwak, Jihye

AU - Kim, Juran

AU - Kim, Jeong Won

AU - Jo, William

AU - Ahn, Seung Kyu

AU - Ahn, Se Jin

N1 - Funding Information: This work was conducted under the framework of the Research and Development Program of the Korea Institute of Energy Research ( B8-2425 ). This work was also supported by the Korea Institute of Energy Technology Evaluation and Planning (KETEP), granted financial resource from the Ministry of Trade, Industry & Energy, Republic of Korea (No. 20163010012430 ) and by the Technology Development Program to Solve Climate Changes of the National Research Foundation (NRF) funded by the Ministry of Science, ICT & Future Planning ( 2016M1A2A2936753 ). Publisher Copyright: © 2018 Elsevier Ltd

PY - 2018/6

Y1 - 2018/6

N2 - Na has been believed to improve the device parameters of open circuit voltage (VOC) and fill factor (FF) presumably by increasing the carrier concentration (NA) of vacuum-processed Cu(In,Ga)Se2 films. In solution-processed CI(G)Se devices as well, Na reportedly increases VOC and FF but this improvement is not correlated with the increase in NA, suggesting a different physical mechanism associated with Na in solution-based routes. In this contribution, experimental results on the role of Na addition in solution-processed CISe films and devices were reported, in which Na addition had no influence on NA nor on film composition in spite of the notable increase in the device efficiency. On the contrary, Na was found to mitigate the interfacial recombination by reducing the undesirable surface defects. Along with this understanding, Na addition in our air-processable route resulted in a CISe device with 12.83% efficiency, which is comparable to the current world record efficiency of solution-processed CISe devices.

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