RF performance and small-signal parameter extraction of junctionless silicon nanowire MOSFETs

Seongjae Cho, Kyung Rok Kim, Byung Gook Park, In Man Kang

Research output: Contribution to journalArticlepeer-review

176 Scopus citations


This paper presents a radio-frequency (RF) model and extracted model parameters for junctionless silicon nanowire (JLSNW) metaloxidesemiconductor field-effect transistors (MOSFETs) using a 3-D device simulator. JLSNW MOSFETs are evaluated for various RF parameters such as cutoff frequency fT, gate input capacitance, distributed channel resistances, transport time delay, and capacitance by the drain-induced barrier lowering effect. Direct comparisons of high-frequency performances and extracted parameters are made with conventional silicon nanowire MOSFETs. A non-quasi-static RF model has been used, along with SPICE to simulate JLSNW MOSFETs with RF parameters extracted from 3-D-simulated Y-parameters. The results show excellent agreements with the 3-D-simulated results up to the high frequency of fT.

Original languageEnglish
Article number5720296
Pages (from-to)1388-1396
Number of pages9
JournalIEEE Transactions on Electron Devices
Issue number5
StatePublished - May 2011


  • Device simulation
  • junctionless (JL)
  • metaloxidesemiconductor field-effect transistor (MOSFET)
  • modeling
  • non-quasi-static (NQS)
  • parameter extraction
  • radio frequency (RF)
  • silicon nanowire (SNW)


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