Abstract
This paper presents a radio-frequency (RF) model and extracted model parameters for junctionless silicon nanowire (JLSNW) metaloxidesemiconductor field-effect transistors (MOSFETs) using a 3-D device simulator. JLSNW MOSFETs are evaluated for various RF parameters such as cutoff frequency fT, gate input capacitance, distributed channel resistances, transport time delay, and capacitance by the drain-induced barrier lowering effect. Direct comparisons of high-frequency performances and extracted parameters are made with conventional silicon nanowire MOSFETs. A non-quasi-static RF model has been used, along with SPICE to simulate JLSNW MOSFETs with RF parameters extracted from 3-D-simulated Y-parameters. The results show excellent agreements with the 3-D-simulated results up to the high frequency of fT.
| Original language | English |
|---|---|
| Article number | 5720296 |
| Pages (from-to) | 1388-1396 |
| Number of pages | 9 |
| Journal | IEEE Transactions on Electron Devices |
| Volume | 58 |
| Issue number | 5 |
| DOIs | |
| State | Published - May 2011 |
Bibliographical note
Funding Information:Manuscript received June 14, 2010; revised December 23, 2010 and January 13, 2011; accepted January 19, 2011. Date of publication February 24, 2011; date of current version April 22, 2011. This work was supported by the Basic Science Research Program through the National Research Foundation of Korea funded by the Ministry of Education, Science and Technology under Grant 2010-0020979. The review of this paper was arranged by Editor D. Verret.
Keywords
- Device simulation
- junctionless (JL)
- metaloxidesemiconductor field-effect transistor (MOSFET)
- modeling
- non-quasi-static (NQS)
- parameter extraction
- radio frequency (RF)
- silicon nanowire (SNW)