Reversible switching mode change in Ta2O5-based resistive switching memory (ReRAM)

Taeyoon Kim; Heerak Son; Inho Kim; Jaewook Kim; Suyoun Lee; Jong Keuk Park; Joon Young Kwak; Jongkil Park; Yeon Joo Jeong

doi:10.1038/s41598-020-68211-y

Reversible switching mode change in Ta₂O₅-based resistive switching memory (ReRAM)

Taeyoon Kim, Heerak Son, Inho Kim, Jaewook Kim, Suyoun Lee, Jong Keuk Park, Joon Young Kwak, Jongkil Park, Yeon Joo Jeong

Semiconductor Engineering

Research output: Contribution to journal › Article › peer-review

27 Scopus citations

Abstract

We report the complementary resistive switching (CRS) behaviors in a tantalum-oxide based resistive switching memory device that reversibly changes its switching mode between bipolar switching (BRS) and CRS in a single memory cell depending on the operation (compliance current) and fabrication (oxygen scavenger layer thickness) conditions. In addition, the origin of the switching mode transition was investigated through electrical and optical measurement, where the conductance is believed to be determined by two factors: formation of conductive filament and modulation of Schottky barrier. This result helps design a resistive switching device with desirable and stable switching behavior.

Original language	English
Article number	11247
Journal	Scientific Reports
Volume	10
Issue number	1
DOIs	https://doi.org/10.1038/s41598-020-68211-y
State	Published - 1 Dec 2020

Bibliographical note

Publisher Copyright:
© 2020, The Author(s).

Access to Document

10.1038/s41598-020-68211-y

Cite this

@article{1e16bcdee32d46328821928965aa8520,

title = "Reversible switching mode change in Ta2O5-based resistive switching memory (ReRAM)",

abstract = "We report the complementary resistive switching (CRS) behaviors in a tantalum-oxide based resistive switching memory device that reversibly changes its switching mode between bipolar switching (BRS) and CRS in a single memory cell depending on the operation (compliance current) and fabrication (oxygen scavenger layer thickness) conditions. In addition, the origin of the switching mode transition was investigated through electrical and optical measurement, where the conductance is believed to be determined by two factors: formation of conductive filament and modulation of Schottky barrier. This result helps design a resistive switching device with desirable and stable switching behavior.",

author = "Taeyoon Kim and Heerak Son and Inho Kim and Jaewook Kim and Suyoun Lee and Park, {Jong Keuk} and Kwak, {Joon Young} and Jongkil Park and Jeong, {Yeon Joo}",

note = "Publisher Copyright: {\textcopyright} 2020, The Author(s).",

year = "2020",

month = dec,

day = "1",

doi = "10.1038/s41598-020-68211-y",

language = "English",

volume = "10",

journal = "Scientific Reports",

issn = "2045-2322",

publisher = "Nature Publishing Group",

number = "1",

}

TY - JOUR

T1 - Reversible switching mode change in Ta2O5-based resistive switching memory (ReRAM)

AU - Kim, Taeyoon

AU - Son, Heerak

AU - Kim, Inho

AU - Kim, Jaewook

AU - Lee, Suyoun

AU - Park, Jong Keuk

AU - Kwak, Joon Young

AU - Park, Jongkil

AU - Jeong, Yeon Joo

PY - 2020/12/1

Y1 - 2020/12/1

N2 - We report the complementary resistive switching (CRS) behaviors in a tantalum-oxide based resistive switching memory device that reversibly changes its switching mode between bipolar switching (BRS) and CRS in a single memory cell depending on the operation (compliance current) and fabrication (oxygen scavenger layer thickness) conditions. In addition, the origin of the switching mode transition was investigated through electrical and optical measurement, where the conductance is believed to be determined by two factors: formation of conductive filament and modulation of Schottky barrier. This result helps design a resistive switching device with desirable and stable switching behavior.

AB - We report the complementary resistive switching (CRS) behaviors in a tantalum-oxide based resistive switching memory device that reversibly changes its switching mode between bipolar switching (BRS) and CRS in a single memory cell depending on the operation (compliance current) and fabrication (oxygen scavenger layer thickness) conditions. In addition, the origin of the switching mode transition was investigated through electrical and optical measurement, where the conductance is believed to be determined by two factors: formation of conductive filament and modulation of Schottky barrier. This result helps design a resistive switching device with desirable and stable switching behavior.

UR - http://www.scopus.com/inward/record.url?scp=85087816478&partnerID=8YFLogxK

U2 - 10.1038/s41598-020-68211-y

DO - 10.1038/s41598-020-68211-y

M3 - Article

C2 - 32647262

AN - SCOPUS:85087816478

SN - 2045-2322

VL - 10

JO - Scientific Reports

JF - Scientific Reports

IS - 1

M1 - 11247

ER -