We report on studies of the resistance switching behaviors of Pt/NiO/Pt structures, whose 60-nm-thick NiO thin films were formed by the thermal oxidation of Ni films. X-ray diffraction studies showed that a single-phase NiO film was obtained and that its lattice constant was very close to that of the bulk. Current-voltage characteristics exhibited reproducible resistance switching under a unipolar bias voltage. The switching voltage and current for the thermally grown NiO thin films did not show large variation in the oxidation temperature range, 350-550°C.
|Number of pages||3|
|Journal||Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers|
|Issue number||8 A|
|State||Published - 6 Aug 2007|
- Resistance switching
- Thermal oxidation