Reversible resistance switching behaviors of Pt/NiO/Pt structures

Dong Wook Kim, Bae Ho Park, Ranju Jung, Sunae Seo

Research output: Contribution to journalArticlepeer-review

9 Scopus citations


We report on studies of the resistance switching behaviors of Pt/NiO/Pt structures, whose 60-nm-thick NiO thin films were formed by the thermal oxidation of Ni films. X-ray diffraction studies showed that a single-phase NiO film was obtained and that its lattice constant was very close to that of the bulk. Current-voltage characteristics exhibited reproducible resistance switching under a unipolar bias voltage. The switching voltage and current for the thermally grown NiO thin films did not show large variation in the oxidation temperature range, 350-550°C.

Original languageEnglish
Pages (from-to)5205-5207
Number of pages3
JournalJapanese Journal of Applied Physics
Issue number8 A
StatePublished - 6 Aug 2007


  • NIO
  • Resistance switching
  • Thermal oxidation


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