Abstract
We report on studies of the resistance switching behaviors of Pt/NiO/Pt structures, whose 60-nm-thick NiO thin films were formed by the thermal oxidation of Ni films. X-ray diffraction studies showed that a single-phase NiO film was obtained and that its lattice constant was very close to that of the bulk. Current-voltage characteristics exhibited reproducible resistance switching under a unipolar bias voltage. The switching voltage and current for the thermally grown NiO thin films did not show large variation in the oxidation temperature range, 350-550°C.
| Original language | English |
|---|---|
| Pages (from-to) | 5205-5207 |
| Number of pages | 3 |
| Journal | Japanese Journal of Applied Physics |
| Volume | 46 |
| Issue number | 8 A |
| DOIs | |
| State | Published - 6 Aug 2007 |
Keywords
- NIO
- Resistance switching
- Thermal oxidation