TY - JOUR
T1 - Revealing Bipolar Photoresponse in Multiheterostructured WTe2-GaTe/ReSe2-WTe2 P-N Diode by Hybrid 2D Contact Engineering
AU - Elahi, Ehsan
AU - Rabeel, Muhammad
AU - Ahmed, Bilal
AU - Aziz, Jamal
AU - Suleman, Muhammad
AU - Khan, Muhammad Asghar
AU - Rehman, Shania
AU - Rehmat, Arslan
AU - Asim, Muhammad
AU - Rehman, Malik Abdul
AU - Ifseisi, Ahmad A.
AU - Assal, Mohamed E.
AU - Khan, Muhammad Farooq
AU - Kim, Sungho
N1 - Publisher Copyright:
© 2024 American Chemical Society.
PY - 2024/10/9
Y1 - 2024/10/9
N2 - The van der Waals (vdW) heterostructures based on two-dimensional (2D) semiconducting materials have been thoroughly investigated with regard to practical applications. Recent studies on 2D materials have reignited attraction in the p-n junction, with promising potential for applications in both electronics and optoelectronics. 2D materials provide exceptional band structural diversity in p-n junction devices, which is rare in regular bulk semiconductors. In this article, we demonstrate a p-n diode based on multiheterostructure configuration, WTe2-GaTe-ReSe2-WTe2, where WTe2 acts as heterocontact with GaTe/ReSe2 junction. Our devices with heterocontacts of WTe2 showed excellent performance in electronic and optoelectronic characteristics as compared to contacts with basic metal electrodes. However, the highest rectification ratio was achieved up to ∼2.09 × 106 with the lowest ideality factor of ∼1.23. Moreover, the maximum change in photocurrent (Iph) is measured around 312 nA at Vds = 0.5 V. The device showed a high responsivity (R) of 4.7 × 104 m·AW-1, maximum external quantum efficiency (EQE) of 2.49 × 104 (%), and detectivity (D*) of 2.1 × 1011 Jones at wavelength λ = 220 nm. Further, we revealed the bipolar photoresponse mechanisms in WTe2-GaTe-ReSe2-WTe2 devices due to band alignment at the interface, which can be modified by applying different gate voltages. Hence, our promising results render heterocontact engineering of the GaTe-ReSe2 heterostructured diode as an excellent candidate for next-generation optoelectronic logic and neuromorphic computing.
AB - The van der Waals (vdW) heterostructures based on two-dimensional (2D) semiconducting materials have been thoroughly investigated with regard to practical applications. Recent studies on 2D materials have reignited attraction in the p-n junction, with promising potential for applications in both electronics and optoelectronics. 2D materials provide exceptional band structural diversity in p-n junction devices, which is rare in regular bulk semiconductors. In this article, we demonstrate a p-n diode based on multiheterostructure configuration, WTe2-GaTe-ReSe2-WTe2, where WTe2 acts as heterocontact with GaTe/ReSe2 junction. Our devices with heterocontacts of WTe2 showed excellent performance in electronic and optoelectronic characteristics as compared to contacts with basic metal electrodes. However, the highest rectification ratio was achieved up to ∼2.09 × 106 with the lowest ideality factor of ∼1.23. Moreover, the maximum change in photocurrent (Iph) is measured around 312 nA at Vds = 0.5 V. The device showed a high responsivity (R) of 4.7 × 104 m·AW-1, maximum external quantum efficiency (EQE) of 2.49 × 104 (%), and detectivity (D*) of 2.1 × 1011 Jones at wavelength λ = 220 nm. Further, we revealed the bipolar photoresponse mechanisms in WTe2-GaTe-ReSe2-WTe2 devices due to band alignment at the interface, which can be modified by applying different gate voltages. Hence, our promising results render heterocontact engineering of the GaTe-ReSe2 heterostructured diode as an excellent candidate for next-generation optoelectronic logic and neuromorphic computing.
KW - 2D materials
KW - photodetection
KW - photodiode
KW - P−N junction
KW - TMDCs
UR - http://www.scopus.com/inward/record.url?scp=85205908433&partnerID=8YFLogxK
U2 - 10.1021/acsami.4c08166
DO - 10.1021/acsami.4c08166
M3 - Article
C2 - 39330931
AN - SCOPUS:85205908433
SN - 1944-8244
VL - 16
SP - 54367
EP - 54376
JO - ACS Applied Materials and Interfaces
JF - ACS Applied Materials and Interfaces
IS - 40
ER -