Resonant Raman study on the nitrogen-induced electronic states in GaAs 1-xN x

M. J. Seong, H. M. Cheong, S. Yoon, A. Mascarenhas, J. F. Geisz, M. C. Hanna

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Nitrogen-induced electronic states, encompassing E 0 through E +, in GaAs 1-xN x (0.2% ≤ x ≤ 1.3 %) have been probed using resonant Raman scattering. We have observed strong Raman intensity resonance enhancement for the L and X zone boundary phonons as well as the zone center Γ phonons for excitations near the E + transition, which provides unambiguous evidence of significant L and X components in the wave function of the nitrogen-induced E + state in GaAs 1-xN x. The resonant Raman scattering profile for the asymmetric line-width broadening of the LO phonon exhibits two distinct maxima attributed to states arising from a splitting of the quadruply degenerate conduction band near the L-point.

Original languageEnglish
Pages (from-to)217-222
Number of pages6
JournalJournal of the Korean Physical Society
Issue number1
StatePublished - Jul 2004


  • Band repulsion
  • Bandgap bowing
  • III-V-N semiconductor alloy
  • Isoelectronic
  • Resonant raman scattering
  • Resonant state


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