Abstract
Nitrogen-induced electronic states, encompassing E 0 through E +, in GaAs 1-xN x (0.2% ≤ x ≤ 1.3 %) have been probed using resonant Raman scattering. We have observed strong Raman intensity resonance enhancement for the L and X zone boundary phonons as well as the zone center Γ phonons for excitations near the E + transition, which provides unambiguous evidence of significant L and X components in the wave function of the nitrogen-induced E + state in GaAs 1-xN x. The resonant Raman scattering profile for the asymmetric line-width broadening of the LO phonon exhibits two distinct maxima attributed to states arising from a splitting of the quadruply degenerate conduction band near the L-point.
Original language | English |
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Pages (from-to) | 217-222 |
Number of pages | 6 |
Journal | Journal of the Korean Physical Society |
Volume | 45 |
Issue number | 1 |
State | Published - Jul 2004 |
Keywords
- Band repulsion
- Bandgap bowing
- III-V-N semiconductor alloy
- Isoelectronic
- Resonant raman scattering
- Resonant state