Resonant Raman scattering studies of localized impurity states in semiconductors

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We review resonant Raman scattering studies of GaAs1-xN x, where nitrogen impurities are spatially localized in the host GaAs. The conventional intensity resonance could provide symmetry information regarding nitrogen-induced states, such as E+, which turned out to have significant components of an L and an X character, in addition to a Y character. We also observed the rather unusual and distinctive phonon linewidth resonance due to spatially locaUzed intermediate states that originated from a splitting of the L-point conduction band. We show that the resonant Raman scattering response, including asymmetric linewidth broadening resonances, can provide a powerful means to study semiconductor systems with strongly localized impurity states.

Original languageEnglish
Pages (from-to)646-651
Number of pages6
JournalJournal of the Korean Physical Society
Issue number2
StatePublished - Aug 2009


  • Localized impurity states
  • Raman scattering
  • Resonant raman scattering


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