We report resonant Raman scattering studies of Ga P1-x Nx and Ga As1-x Nx in the ultraviolet (UV) spectral range. For both materials, strong intensity resonances and their rapid degradation near the respective E1 transition energies exhibited for the zone-center longitudinal optical phonons provide direct evidence that the L -point conduction-band edges of Ga P1-x Nx and Ga As1-x Nx are strongly perturbed by nitrogen impurities. We also show that UV resonant Raman scattering is a powerful means to study higher lying conduction-band electronic states of semiconductor alloys.
|Journal||Physical Review B - Condensed Matter and Materials Physics|
|State||Published - 2005|