Resonant Raman scattering spectroscopy of Ga P1-x Nx and Ga As1-x Nx in the ultraviolet range

S. Yoon; J. F. Geisz; Sung Ho Han; A. Mascarenhas; M. Rübhausen; B. Schulz

doi:10.1103/PhysRevB.71.155208

Resonant Raman scattering spectroscopy of Ga P1-x Nx and Ga As1-x Nx in the ultraviolet range

S. Yoon, J. F. Geisz, Sung Ho Han, A. Mascarenhas, M. Rübhausen, B. Schulz

Department of Physics

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

We report resonant Raman scattering studies of Ga P1-x Nx and Ga As1-x Nx in the ultraviolet (UV) spectral range. For both materials, strong intensity resonances and their rapid degradation near the respective E1 transition energies exhibited for the zone-center longitudinal optical phonons provide direct evidence that the L -point conduction-band edges of Ga P1-x Nx and Ga As1-x Nx are strongly perturbed by nitrogen impurities. We also show that UV resonant Raman scattering is a powerful means to study higher lying conduction-band electronic states of semiconductor alloys.

Original language	English
Article number	155208
Journal	Physical Review B - Condensed Matter and Materials Physics
Volume	71
Issue number	15
DOIs	https://doi.org/10.1103/PhysRevB.71.155208
State	Published - 2005

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10.1103/PhysRevB.71.155208

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title = "Resonant Raman scattering spectroscopy of Ga P1-x Nx and Ga As1-x Nx in the ultraviolet range",

abstract = "We report resonant Raman scattering studies of Ga P1-x Nx and Ga As1-x Nx in the ultraviolet (UV) spectral range. For both materials, strong intensity resonances and their rapid degradation near the respective E1 transition energies exhibited for the zone-center longitudinal optical phonons provide direct evidence that the L -point conduction-band edges of Ga P1-x Nx and Ga As1-x Nx are strongly perturbed by nitrogen impurities. We also show that UV resonant Raman scattering is a powerful means to study higher lying conduction-band electronic states of semiconductor alloys.",

author = "S. Yoon and Geisz, {J. F.} and Han, {Sung Ho} and A. Mascarenhas and M. R{\"u}bhausen and B. Schulz",

year = "2005",

doi = "10.1103/PhysRevB.71.155208",

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journal = "Physical Review B - Condensed Matter and Materials Physics",

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T1 - Resonant Raman scattering spectroscopy of Ga P1-x Nx and Ga As1-x Nx in the ultraviolet range

AU - Yoon, S.

AU - Geisz, J. F.

AU - Han, Sung Ho

AU - Mascarenhas, A.

AU - Rübhausen, M.

AU - Schulz, B.

PY - 2005

Y1 - 2005

N2 - We report resonant Raman scattering studies of Ga P1-x Nx and Ga As1-x Nx in the ultraviolet (UV) spectral range. For both materials, strong intensity resonances and their rapid degradation near the respective E1 transition energies exhibited for the zone-center longitudinal optical phonons provide direct evidence that the L -point conduction-band edges of Ga P1-x Nx and Ga As1-x Nx are strongly perturbed by nitrogen impurities. We also show that UV resonant Raman scattering is a powerful means to study higher lying conduction-band electronic states of semiconductor alloys.

AB - We report resonant Raman scattering studies of Ga P1-x Nx and Ga As1-x Nx in the ultraviolet (UV) spectral range. For both materials, strong intensity resonances and their rapid degradation near the respective E1 transition energies exhibited for the zone-center longitudinal optical phonons provide direct evidence that the L -point conduction-band edges of Ga P1-x Nx and Ga As1-x Nx are strongly perturbed by nitrogen impurities. We also show that UV resonant Raman scattering is a powerful means to study higher lying conduction-band electronic states of semiconductor alloys.

UR - http://www.scopus.com/inward/record.url?scp=28644441306&partnerID=8YFLogxK

U2 - 10.1103/PhysRevB.71.155208

DO - 10.1103/PhysRevB.71.155208

M3 - Article

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SN - 1098-0121

VL - 71

JO - Physical Review B - Condensed Matter and Materials Physics

JF - Physical Review B - Condensed Matter and Materials Physics

IS - 15

M1 - 155208

ER -

Resonant Raman scattering spectroscopy of Ga P1-x Nx and Ga As1-x Nx in the ultraviolet range

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