Resistive switching phenomena of HfO2 films grown by MOCVD for resistive switching memory devices

Hee Dong Kim; Min Ju Yun; Sungho Kim

doi:10.3938/jkps.69.439

Resistive switching phenomena of HfO₂ films grown by MOCVD for resistive switching memory devices

Hee Dong Kim, Min Ju Yun, Sungho Kim

Semiconductor Engineering

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

The resistive switching phenomena of HfO₂ films grown by using metal organic chemical vapor deposition (MOCVD) was studied for the application of resistive random access memory (ReRAM) devices. In the fabricated Pt/HfO₂/TiN memory cells, bipolar resistive switching characteristics were observed, and the set and reset states were measured to be as low as 7 μA and 4 μA, respectively, at V_READ = 1 V. Regarding the resistive switching performance, stable resistive switching (RS) performance was observed under 40 repetitive dc cycles with small variations of set/reset voltages and the currents and good retention characteristics of over 10⁵ s in both the low-resistance state (LRS) and the high-resistance state (HRS). These results show the possibility of using MOCVDgrown HfO₂ films as a promising resistive switching materials for ReRAM applications.

Original language	English
Pages (from-to)	439-442
Number of pages	4
Journal	Journal of the Korean Physical Society
Volume	69
Issue number	3
DOIs	https://doi.org/10.3938/jkps.69.439
State	Published - 1 Aug 2016

Bibliographical note

Publisher Copyright:
© 2016, The Korean Physical Society.

Keywords

HfO films
MOCVD
ReRAM

Access to Document

10.3938/jkps.69.439

Cite this

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title = "Resistive switching phenomena of HfO2 films grown by MOCVD for resistive switching memory devices",

abstract = "The resistive switching phenomena of HfO2 films grown by using metal organic chemical vapor deposition (MOCVD) was studied for the application of resistive random access memory (ReRAM) devices. In the fabricated Pt/HfO2/TiN memory cells, bipolar resistive switching characteristics were observed, and the set and reset states were measured to be as low as 7 μA and 4 μA, respectively, at VREAD = 1 V. Regarding the resistive switching performance, stable resistive switching (RS) performance was observed under 40 repetitive dc cycles with small variations of set/reset voltages and the currents and good retention characteristics of over 105 s in both the low-resistance state (LRS) and the high-resistance state (HRS). These results show the possibility of using MOCVDgrown HfO2 films as a promising resistive switching materials for ReRAM applications.",

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AU - Kim, Hee Dong

AU - Yun, Min Ju

AU - Kim, Sungho

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N2 - The resistive switching phenomena of HfO2 films grown by using metal organic chemical vapor deposition (MOCVD) was studied for the application of resistive random access memory (ReRAM) devices. In the fabricated Pt/HfO2/TiN memory cells, bipolar resistive switching characteristics were observed, and the set and reset states were measured to be as low as 7 μA and 4 μA, respectively, at VREAD = 1 V. Regarding the resistive switching performance, stable resistive switching (RS) performance was observed under 40 repetitive dc cycles with small variations of set/reset voltages and the currents and good retention characteristics of over 105 s in both the low-resistance state (LRS) and the high-resistance state (HRS). These results show the possibility of using MOCVDgrown HfO2 films as a promising resistive switching materials for ReRAM applications.

AB - The resistive switching phenomena of HfO2 films grown by using metal organic chemical vapor deposition (MOCVD) was studied for the application of resistive random access memory (ReRAM) devices. In the fabricated Pt/HfO2/TiN memory cells, bipolar resistive switching characteristics were observed, and the set and reset states were measured to be as low as 7 μA and 4 μA, respectively, at VREAD = 1 V. Regarding the resistive switching performance, stable resistive switching (RS) performance was observed under 40 repetitive dc cycles with small variations of set/reset voltages and the currents and good retention characteristics of over 105 s in both the low-resistance state (LRS) and the high-resistance state (HRS). These results show the possibility of using MOCVDgrown HfO2 films as a promising resistive switching materials for ReRAM applications.

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