Resistive switching of aluminum oxide for flexible memory

Sungho Kim; Yang Kyu Choi

doi:10.1063/1.2939555

Resistive switching of aluminum oxide for flexible memory

Sungho Kim, Yang Kyu Choi

Semiconductor Engineering

Research output: Contribution to journal › Article › peer-review

131 Scopus citations

Abstract

The unipolar resistive switching of the AlAl_xO_y Al structure is investigated for nonvolatile memory. Following the production of aluminum oxide film (Al_xO_y) by plasma oxidation, a high ratio of on-state and off-state currents ( 10⁴) is achieved, and characteristics of switching endurance are reported. Due to the good ductility of aluminum, the performance of resistive switching on a flexible substrate is not degraded by severe substrate bending. The low process temperature of the plasma oxidation process is advantageous for the fabrication of flexible electronic devices and modern interconnection processes.

Original language	English
Article number	223508
Journal	Applied Physics Letters
Volume	92
Issue number	22
DOIs	https://doi.org/10.1063/1.2939555
State	Published - 2008

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abstract = "The unipolar resistive switching of the AlAlxOy Al structure is investigated for nonvolatile memory. Following the production of aluminum oxide film (AlxOy) by plasma oxidation, a high ratio of on-state and off-state currents ( 104) is achieved, and characteristics of switching endurance are reported. Due to the good ductility of aluminum, the performance of resistive switching on a flexible substrate is not degraded by severe substrate bending. The low process temperature of the plasma oxidation process is advantageous for the fabrication of flexible electronic devices and modern interconnection processes.",

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AB - The unipolar resistive switching of the AlAlxOy Al structure is investigated for nonvolatile memory. Following the production of aluminum oxide film (AlxOy) by plasma oxidation, a high ratio of on-state and off-state currents ( 104) is achieved, and characteristics of switching endurance are reported. Due to the good ductility of aluminum, the performance of resistive switching on a flexible substrate is not degraded by severe substrate bending. The low process temperature of the plasma oxidation process is advantageous for the fabrication of flexible electronic devices and modern interconnection processes.

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Resistive switching of aluminum oxide for flexible memory

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