Resistive switching characteristics of Sol-Gel Zinc oxide films for flexible memory applications

Sungho Kim, Hanul Moon, Dipti Gupta, Seunghyup Yoo, Yang Kyu Choi

Research output: Contribution to journalArticlepeer-review

174 Scopus citations

Abstract

Unipolar resistive switching devices are investigated for nonvolatile memory applications in a metal-insulator-metal structure in which the insulator layer is based on sol-gel-derived zinc oxide (ZnO) films prepared by a simple spin-coating process followed by thermal annealing. Fast programming (≤ 50 ns) and a high off-to-on resistance ratio (≥ 104) is demonstrated. The influences on the switching behaviors according to the crystallinity of the ZnO films are studied as a function of the annealing temperature. In addition, the devices are fabricated on a flexible plastic substrate and exhibit excellent durability upon repeated bending tests, demonstrating their potential for flexible low-cost memory devices.

Original languageEnglish
Pages (from-to)696-699
Number of pages4
JournalIEEE Transactions on Electron Devices
Volume56
Issue number4
DOIs
StatePublished - 2009

Keywords

  • Flexible
  • Resistance random access memory (RRAM)
  • Resistive switching
  • Sol-gel
  • Zinc oxide (ZnO)

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