Abstract
Unipolar resistive switching devices are investigated for nonvolatile memory applications in a metal-insulator-metal structure in which the insulator layer is based on sol-gel-derived zinc oxide (ZnO) films prepared by a simple spin-coating process followed by thermal annealing. Fast programming (≤ 50 ns) and a high off-to-on resistance ratio (≥ 104) is demonstrated. The influences on the switching behaviors according to the crystallinity of the ZnO films are studied as a function of the annealing temperature. In addition, the devices are fabricated on a flexible plastic substrate and exhibit excellent durability upon repeated bending tests, demonstrating their potential for flexible low-cost memory devices.
Original language | English |
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Pages (from-to) | 696-699 |
Number of pages | 4 |
Journal | IEEE Transactions on Electron Devices |
Volume | 56 |
Issue number | 4 |
DOIs | |
State | Published - 2009 |
Keywords
- Flexible
- Resistance random access memory (RRAM)
- Resistive switching
- Sol-gel
- Zinc oxide (ZnO)