Resistive switching characteristics of silicon nitride-based RRAM depending on top electrode metals

Sungjun Kim, Sunghun Jung, Min Hwi Kim, Seongjae Cho, Byung Gook Park

Research output: Contribution to journalArticlepeer-review

18 Scopus citations

Abstract

In this work, resistive switching random-access memory (RRAM) devices having a structure of metal/Si3N4/Si with different top electrode metals were fabricated to investigate the changes in switching and conduction mechanisms depending on electrode metals. It is shown that the metal workfunction is not strongly related with either high-resistance state (HRS) and forming voltage. Top electrodes (TEs) of Al, Cu, and Ni show both bipolar and unipolar switching characteristics. The changes of resistances in these devices can be explained by the different defect arrangements in the switching layer (SL). Among the devices with different TE metals, one with Ag electrode does not show unipolar switching unlike the others. The conducting filaments of Ag-electrode device in the low-resistance state (LRS) demonstrated metallic behaviors in the temperature-controlled experiments, which supports that Ag substantially participates in the conduction as a filament source. Moreover, the difference in switching speed is identified depending on TE metals.

Original languageEnglish
Pages (from-to)429-433
Number of pages5
JournalIEICE Transactions on Electronics
VolumeE98C
Issue number5
DOIs
StatePublished - 1 May 2015

Bibliographical note

Publisher Copyright:
Copyright © 2015 The Institute of Electronics, Information and Communication Engineers.

Keywords

  • RRAM
  • Switching and conduction mechanism
  • Top electrode (TE)

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