Resistive switching and transport characteristics of cu/a-Si/Si devices

Bo Soo Kang, Dongjae Cha, Sungjoo Lee, Sang Chul Na, Dong Wook Kim

Research output: Contribution to journalArticlepeer-review

4 Scopus citations


We prepared Cu/amorphous silicon (a-Si)/Si structures with active device diameters of 5, 10, and 20 μm. The Cu/a-Si/Si devices showed bipolar resistive switching (RS) behaviors and the ON/OFF ratio was larger than 106. In the low-resistance state (LRS), the current-voltage (I-V) curves of the 10- and 20-μm-sized devices were linear. In contrast, the LRS I-V curves for the 5-μm-sized devices were symmetric and nonlinear, which could be explained by tunnelling conduction. The Cu/a-Si/Si devices consist of materials compatible with conventional CMOS processes and can be candidates for nonvolatile memory devices.

Original languageEnglish
Pages (from-to)1156-1159
Number of pages4
JournalJournal of the Korean Physical Society
Issue number5
StatePublished - 13 May 2011


  • A-Si
  • Metal-semiconductor-semiconductor structure
  • Resistive switching


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