Resistance switching in electroformed Pt/FeOx/Pt structures

S. B. Lee, S. C. Chae, S. H. Chang, C. Liu, C. U. Jung, S. Seo, D. W. Kim

Research output: Contribution to journalArticlepeer-review

23 Scopus citations


We report studies of resistance switching characteristics of Pt/FeO x/Pt structures, of which FeOx thin films were formed by thermal oxidation of Fe layers. X-ray diffraction (XRD) studies showed that less oxidized Fe3O4 phase disappeared and α-Fe 3O4 phase was formed at annealing temperatures ≥400 °C. The electroforming process, usually occurring at 7 ∼ 10 V, increased the conductivity of the structure significantly(> 102) and brought about reversible resistance switching under unipolar bias voltage. We successfully demonstrated that the FeOx films exhibited reliable memory switching behaviors.

Original languageEnglish
Pages (from-to)S96-S99
JournalJournal of the Korean Physical Society
Issue numberSUPPL. 2
StatePublished - Oct 2007


  • Electroforming
  • Iron oxides
  • Resistance switching


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