Resistance switching in electroformed Pt/FeOx/Pt structures

S. B. Lee; S. C. Chae; S. H. Chang; C. Liu; C. U. Jung; S. Seo; D. W. Kim

doi:10.3938/jkps.51.96

Resistance switching in electroformed Pt/FeO_x/Pt structures

S. B. Lee, S. C. Chae, S. H. Chang, C. Liu, C. U. Jung, S. Seo, D. W. Kim

Department of Physics

Research output: Contribution to journal › Article › peer-review

23 Scopus citations

Abstract

We report studies of resistance switching characteristics of Pt/FeO _x/Pt structures, of which FeO_x thin films were formed by thermal oxidation of Fe layers. X-ray diffraction (XRD) studies showed that less oxidized Fe₃O₄ phase disappeared and α-Fe ₃O₄ phase was formed at annealing temperatures ≥400 °C. The electroforming process, usually occurring at 7 ∼ 10 V, increased the conductivity of the structure significantly(> 10²) and brought about reversible resistance switching under unipolar bias voltage. We successfully demonstrated that the FeO_x films exhibited reliable memory switching behaviors.

Original language	English
Pages (from-to)	S96-S99
Journal	Journal of the Korean Physical Society
Volume	51
Issue number	SUPPL. 2
DOIs	https://doi.org/10.3938/jkps.51.96
State	Published - Oct 2007

Keywords

Electroforming
Iron oxides
Resistance switching

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10.3938/jkps.51.96

Cite this

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title = "Resistance switching in electroformed Pt/FeOx/Pt structures",

abstract = "We report studies of resistance switching characteristics of Pt/FeO x/Pt structures, of which FeOx thin films were formed by thermal oxidation of Fe layers. X-ray diffraction (XRD) studies showed that less oxidized Fe3O4 phase disappeared and α-Fe 3O4 phase was formed at annealing temperatures ≥400 °C. The electroforming process, usually occurring at 7 ∼ 10 V, increased the conductivity of the structure significantly(> 102) and brought about reversible resistance switching under unipolar bias voltage. We successfully demonstrated that the FeOx films exhibited reliable memory switching behaviors.",

keywords = "Electroforming, Iron oxides, Resistance switching",

author = "Lee, {S. B.} and Chae, {S. C.} and Chang, {S. H.} and C. Liu and Jung, {C. U.} and S. Seo and Kim, {D. W.}",

year = "2007",

month = oct,

doi = "10.3938/jkps.51.96",

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volume = "51",

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T1 - Resistance switching in electroformed Pt/FeOx/Pt structures

AU - Lee, S. B.

AU - Chae, S. C.

AU - Chang, S. H.

AU - Liu, C.

AU - Jung, C. U.

AU - Seo, S.

AU - Kim, D. W.

PY - 2007/10

Y1 - 2007/10

N2 - We report studies of resistance switching characteristics of Pt/FeO x/Pt structures, of which FeOx thin films were formed by thermal oxidation of Fe layers. X-ray diffraction (XRD) studies showed that less oxidized Fe3O4 phase disappeared and α-Fe 3O4 phase was formed at annealing temperatures ≥400 °C. The electroforming process, usually occurring at 7 ∼ 10 V, increased the conductivity of the structure significantly(> 102) and brought about reversible resistance switching under unipolar bias voltage. We successfully demonstrated that the FeOx films exhibited reliable memory switching behaviors.

AB - We report studies of resistance switching characteristics of Pt/FeO x/Pt structures, of which FeOx thin films were formed by thermal oxidation of Fe layers. X-ray diffraction (XRD) studies showed that less oxidized Fe3O4 phase disappeared and α-Fe 3O4 phase was formed at annealing temperatures ≥400 °C. The electroforming process, usually occurring at 7 ∼ 10 V, increased the conductivity of the structure significantly(> 102) and brought about reversible resistance switching under unipolar bias voltage. We successfully demonstrated that the FeOx films exhibited reliable memory switching behaviors.

KW - Electroforming

KW - Iron oxides

KW - Resistance switching

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U2 - 10.3938/jkps.51.96

DO - 10.3938/jkps.51.96

M3 - Article

AN - SCOPUS:36349025306

SN - 0374-4884

VL - 51

SP - S96-S99

JO - Journal of the Korean Physical Society

JF - Journal of the Korean Physical Society

IS - SUPPL. 2

ER -