We report studies of resistance switching characteristics of Pt/FeO x/Pt structures, of which FeOx thin films were formed by thermal oxidation of Fe layers. X-ray diffraction (XRD) studies showed that less oxidized Fe3O4 phase disappeared and α-Fe 3O4 phase was formed at annealing temperatures ≥400 °C. The electroforming process, usually occurring at 7 ∼ 10 V, increased the conductivity of the structure significantly(> 102) and brought about reversible resistance switching under unipolar bias voltage. We successfully demonstrated that the FeOx films exhibited reliable memory switching behaviors.
- Iron oxides
- Resistance switching