Resistance state-dependent barrier inhomogeneity and transport mechanisms in resistive-switching Pt/ SrTiO3 junctions

Eunsongyi Lee, Minji Gwon, Dong Wook Kim, Hogyoung Kim

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39 Scopus citations

Abstract

We investigated the current-voltage (I-V) and photocurrent characteristics of Pt/Nb-doped SrTiO3 (001) single-crystal junctions that exhibit resistive-switching behaviors. The temperature-dependent I-V data and the photocurrent spectra showed that the barrier height fluctuation depended on the resistance state but the mean barrier height was nearly constant regardless of the junctions' resistance state. In addition, local barrier height variations allowed transitions from thermionic to tunneling transport for the low-resistance state.

Original languageEnglish
Article number132905
JournalApplied Physics Letters
Volume98
Issue number13
DOIs
StatePublished - 28 Mar 2011

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