Resistance state-dependent barrier inhomogeneity and transport mechanisms in resistive-switching Pt/ SrTiO3 junctions

Eunsongyi Lee; Minji Gwon; Dong Wook Kim; Hogyoung Kim

doi:10.1063/1.3567755

Resistance state-dependent barrier inhomogeneity and transport mechanisms in resistive-switching Pt/ SrTiO₃ junctions

Eunsongyi Lee, Minji Gwon, Dong Wook Kim, Hogyoung Kim

Department of Physics

Research output: Contribution to journal › Article › peer-review

40 Scopus citations

Abstract

We investigated the current-voltage (I-V) and photocurrent characteristics of Pt/Nb-doped SrTiO₃ (001) single-crystal junctions that exhibit resistive-switching behaviors. The temperature-dependent I-V data and the photocurrent spectra showed that the barrier height fluctuation depended on the resistance state but the mean barrier height was nearly constant regardless of the junctions' resistance state. In addition, local barrier height variations allowed transitions from thermionic to tunneling transport for the low-resistance state.

Original language	English
Article number	132905
Journal	Applied Physics Letters
Volume	98
Issue number	13
DOIs	https://doi.org/10.1063/1.3567755
State	Published - 28 Mar 2011

Bibliographical note

Funding Information:
This work was supported by the Quantum Metamaterials Research Center (Grant No. 2009-0063324) and the Pioneer Research Center Program (Grant No. 2010-0002231) through the National Research Foundation of Korea Grant funded by the Ministry of Education, Science, and Technology, and the National Program for 0.1 Terabit NVM Devices sponsored by the Korean Ministry of Knowledge and Economy.

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10.1063/1.3567755

Cite this

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title = "Resistance state-dependent barrier inhomogeneity and transport mechanisms in resistive-switching Pt/ SrTiO3 junctions",

abstract = "We investigated the current-voltage (I-V) and photocurrent characteristics of Pt/Nb-doped SrTiO3 (001) single-crystal junctions that exhibit resistive-switching behaviors. The temperature-dependent I-V data and the photocurrent spectra showed that the barrier height fluctuation depended on the resistance state but the mean barrier height was nearly constant regardless of the junctions' resistance state. In addition, local barrier height variations allowed transitions from thermionic to tunneling transport for the low-resistance state.",

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AU - Gwon, Minji

AU - Kim, Dong Wook

AU - Kim, Hogyoung

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N2 - We investigated the current-voltage (I-V) and photocurrent characteristics of Pt/Nb-doped SrTiO3 (001) single-crystal junctions that exhibit resistive-switching behaviors. The temperature-dependent I-V data and the photocurrent spectra showed that the barrier height fluctuation depended on the resistance state but the mean barrier height was nearly constant regardless of the junctions' resistance state. In addition, local barrier height variations allowed transitions from thermionic to tunneling transport for the low-resistance state.

AB - We investigated the current-voltage (I-V) and photocurrent characteristics of Pt/Nb-doped SrTiO3 (001) single-crystal junctions that exhibit resistive-switching behaviors. The temperature-dependent I-V data and the photocurrent spectra showed that the barrier height fluctuation depended on the resistance state but the mean barrier height was nearly constant regardless of the junctions' resistance state. In addition, local barrier height variations allowed transitions from thermionic to tunneling transport for the low-resistance state.

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