Reproducible resistance switching in polycrystalline NiO films

S. Seo, M. J. Lee, D. H. Seo, E. J. Jeoung, D. S. Suh, Y. S. Joung, I. K. Yoo, I. R. Hwang, S. H. Kim, I. S. Byun, J. S. Kim, J. S. Choi, B. H. Park

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Negative resistance behavior and reproducible resistance switching were found in polycrystalline NiO films deposited by dc magnetron reactive sputtering methods. Oxygen to argon gas ratio during deposition was critical in deciding the detailed switching characteristics of either bi-stable memory switching or mono-stable threshold switching. Both metallic nickel defects and nickel vacancies influenced the negative resistance and the switching characteristics. We obtained a distribution of low resistance values which were dependent on the compliance current of high-to-low resistance switching. At 200°C, the low-resistance state kept its initial resistance value while the high-resistance state reached 85% of its initial resistance value after 5 × 105 s. We suggested that the negative resistance and the switching mechanism could be described by electron conduction related to metallic nickel defect states existing in deep levels and by small-polaron hole hopping conduction.

Original languageEnglish
Pages (from-to)5655-5657
Number of pages3
JournalApplied Physics Letters
Issue number23
StatePublished - 6 Dec 2004

Bibliographical note

Funding Information:
B.H.P. was supported by Samsung Advanced Institute of Technology, National R&D Project for Nano Science and Technology (Project No. M1-0212-29-0000) of MOST, Grant No. R08-2003-000-10051-0 from the Basic Research Program of the Korea Science & Engineering Foundation, and a grant from Center for Applied Superconductivity Technology of the 21st Century Frontier R&D Program funded by the Ministry of Science and Technology, Republic of Korea.


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