Reliability improvement of 1T DRAM based on feedback transistor by using local partial insulators

Quan The Nguyen, Deokjin Jang, Md Hasan Raza Ansari, Garam Kim, Seongjae Cho, Il Hwan Cho

Research output: Contribution to journalArticlepeer-review

3 Scopus citations


This paper proposes a one-transistor dynamic random-access memory (1 T DRAM) with local partial insulator (LPI) to increase data retention time. Proposed 1 T DRAM cell has improved retention characteristics because LPIs inhibit stored carrier movement with a high energy barrier. Definition of retention time in the proposed 1 T DRAM is introduced at hold "0"state. Device optimization with parameter variation is investigated with device simulation. As the barrier length increases, retention characteristics can be improved but it also causes a decrease in the I1/I0 current ratio. An increase in LPI length can improve the retention characteristics but reduce the I1/I0 current ratio. It was confirmed that the retention characteristics were improved as the hold bias was decreased. Finally, the retention characteristics were optimized when the LPI was precisely formed at the junction boundary.

Original languageEnglish
Article number104002
JournalJapanese Journal of Applied Physics
Issue number10
StatePublished - Oct 2021

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© 2021 The Japan Society of Applied Physics.


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