In this research, the reverse short channel effect (RSCE) is significantly different in electrical behavior for diffused well and high-energy (>150 keV - boron) implanted retrograde well (HRW) due to dopant diffusion kinetics. The magnitude of the Δ VTH is significantly smaller in the HRW than in diffused well. We investigate the influence of various implantation energies and doses on the RSCE, and we use process and device simulation to analyze the RSCE.
- Diffused well
- Retrograde well
- Reverse short-channal effects
- Threshold voltage