Reduction of reverse short-channel effect in high-energy implanted retrograde well

Hyeokjae Lee; Young June Park; Hong Shick Min; Hyungsoon Shin; Dae Gwan Kang

doi:10.3938/jkps.40.649

Reduction of reverse short-channel effect in high-energy implanted retrograde well

Hyeokjae Lee, Young June Park, Hong Shick Min, Hyungsoon Shin, Dae Gwan Kang

Electronic and Electrical Engineering

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

In this research, the reverse short channel effect (RSCE) is significantly different in electrical behavior for diffused well and high-energy (>150 keV - boron) implanted retrograde well (HRW) due to dopant diffusion kinetics. The magnitude of the Δ V_TH is significantly smaller in the HRW than in diffused well. We investigate the influence of various implantation energies and doses on the RSCE, and we use process and device simulation to analyze the RSCE.

Original language	English
Pages (from-to)	649-652
Number of pages	4
Journal	Journal of the Korean Physical Society
Volume	40
Issue number	4
DOIs	https://doi.org/10.3938/jkps.40.649
State	Published - Apr 2002

Keywords

CMOS
Diffused well
MOSFETs
Retrograde well
Reverse short-channal effects
TED
Threshold voltage

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10.3938/jkps.40.649

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title = "Reduction of reverse short-channel effect in high-energy implanted retrograde well",

abstract = "In this research, the reverse short channel effect (RSCE) is significantly different in electrical behavior for diffused well and high-energy (>150 keV - boron) implanted retrograde well (HRW) due to dopant diffusion kinetics. The magnitude of the Δ VTH is significantly smaller in the HRW than in diffused well. We investigate the influence of various implantation energies and doses on the RSCE, and we use process and device simulation to analyze the RSCE.",

keywords = "CMOS, Diffused well, MOSFETs, Retrograde well, Reverse short-channal effects, TED, Threshold voltage",

author = "Hyeokjae Lee and Park, {Young June} and Min, {Hong Shick} and Hyungsoon Shin and Kang, {Dae Gwan}",

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TY - JOUR

T1 - Reduction of reverse short-channel effect in high-energy implanted retrograde well

AU - Lee, Hyeokjae

AU - Park, Young June

AU - Min, Hong Shick

AU - Shin, Hyungsoon

AU - Kang, Dae Gwan

PY - 2002/4

Y1 - 2002/4

N2 - In this research, the reverse short channel effect (RSCE) is significantly different in electrical behavior for diffused well and high-energy (>150 keV - boron) implanted retrograde well (HRW) due to dopant diffusion kinetics. The magnitude of the Δ VTH is significantly smaller in the HRW than in diffused well. We investigate the influence of various implantation energies and doses on the RSCE, and we use process and device simulation to analyze the RSCE.

AB - In this research, the reverse short channel effect (RSCE) is significantly different in electrical behavior for diffused well and high-energy (>150 keV - boron) implanted retrograde well (HRW) due to dopant diffusion kinetics. The magnitude of the Δ VTH is significantly smaller in the HRW than in diffused well. We investigate the influence of various implantation energies and doses on the RSCE, and we use process and device simulation to analyze the RSCE.

KW - CMOS

KW - Diffused well

KW - MOSFETs

KW - Retrograde well

KW - Reverse short-channal effects

KW - TED

KW - Threshold voltage

UR - http://www.scopus.com/inward/record.url?scp=0036012684&partnerID=8YFLogxK

U2 - 10.3938/jkps.40.649

DO - 10.3938/jkps.40.649

M3 - Article

AN - SCOPUS:0036012684

SN - 0374-4884

VL - 40

SP - 649

EP - 652

JO - Journal of the Korean Physical Society

JF - Journal of the Korean Physical Society

IS - 4

ER -

Reduction of reverse short-channel effect in high-energy implanted retrograde well

Abstract

Keywords

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