Reduced Operation Current of Oxygen-doped ZrN based Resistive Switching Memory Devices Fabricated by Radio Frequency Sputtering Method

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Cite this

@article{fc594896b8a442f09b941abc352c77b3,

title = "Reduced Operation Current of Oxygen-doped ZrN based Resistive Switching Memory Devices Fabricated by Radio Frequency Sputtering Method",

author = "Jinsu Jung and Dongju Bae and Sungho Kim and Hee-Dong Kim",

year = "2021",

language = "English",

journal = "Coatings",

issn = "2079-6412",

publisher = "Multidisciplinary Digital Publishing Institute (MDPI)",

}