Reduced Operation Current of Oxygen-doped ZrN based Resistive Switching Memory Devices Fabricated by Radio Frequency Sputtering Method

Jinsu Jung, Dongju Bae, Sungho Kim, Hee-Dong Kim

Research output: Contribution to journal › Article › peer-review

Cite this

@article{fc594896b8a442f09b941abc352c77b3,

title = "Reduced Operation Current of Oxygen-doped ZrN based Resistive Switching Memory Devices Fabricated by Radio Frequency Sputtering Method",

author = "Jinsu Jung and Dongju Bae and Sungho Kim and Hee-Dong Kim",

year = "2021",

language = "English",

journal = "Coatings",

issn = "2079-6412",

publisher = "Multidisciplinary Digital Publishing Institute (MDPI)",

}