Reduced leakage currents and possible charge carriers tuning in Mg-doped Ga 0.6Fe 1.4O 3 thin films

C. Lefevre; R. H. Shin; J. H. Lee; S. H. Oh; F. Roulland; A. Thomasson; E. Autissier; C. Meny; W. Jo; N. Viart

doi:10.1063/1.4729872

Reduced leakage currents and possible charge carriers tuning in Mg-doped Ga _0.6Fe _1.4O ₃ thin films

C. Lefevre, R. H. Shin, J. H. Lee, S. H. Oh, F. Roulland, A. Thomasson, E. Autissier, C. Meny, W. Jo, N. Viart

Department of Physics

Research output: Contribution to journal › Article › peer-review

26 Scopus citations

Abstract

Ga _0.6Fe _1.4O ₃ is predicted to be magnetoelectric with non zero magnetization at room temperature. However, in thin films, electric properties are overshadowed by strong leakage currents. In this Letter, we show that Mg doping in Ga _0.6Fe _1.4O ₃ thin films grown by pulsed laser deposition allows decreasing the leakage current density by four orders of magnitude and might simultaneously allow tuning the carriers' nature. These results suggest the possibility to develop a new class of material exhibiting room temperature magnetization, tunable transport properties, and magnetoelectric properties.

Original language	English
Article number	262904
Journal	Applied Physics Letters
Volume	100
Issue number	26
DOIs	https://doi.org/10.1063/1.4729872
State	Published - 25 Jun 2012

Bibliographical note

Funding Information:
This work was supported by the CNRS PICS program # 5733 and the Leading Foreign Research Institute Recruitment Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology (MEST) (2011-00267).

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10.1063/1.4729872

Cite this

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title = "Reduced leakage currents and possible charge carriers tuning in Mg-doped Ga 0.6Fe 1.4O 3 thin films",

abstract = "Ga 0.6Fe 1.4O 3 is predicted to be magnetoelectric with non zero magnetization at room temperature. However, in thin films, electric properties are overshadowed by strong leakage currents. In this Letter, we show that Mg doping in Ga 0.6Fe 1.4O 3 thin films grown by pulsed laser deposition allows decreasing the leakage current density by four orders of magnitude and might simultaneously allow tuning the carriers' nature. These results suggest the possibility to develop a new class of material exhibiting room temperature magnetization, tunable transport properties, and magnetoelectric properties.",

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note = "Funding Information: This work was supported by the CNRS PICS program # 5733 and the Leading Foreign Research Institute Recruitment Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology (MEST) (2011-00267).",

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T1 - Reduced leakage currents and possible charge carriers tuning in Mg-doped Ga 0.6Fe 1.4O 3 thin films

AU - Lefevre, C.

AU - Shin, R. H.

AU - Lee, J. H.

AU - Oh, S. H.

AU - Roulland, F.

AU - Thomasson, A.

AU - Autissier, E.

AU - Meny, C.

AU - Jo, W.

AU - Viart, N.

N1 - Funding Information: This work was supported by the CNRS PICS program # 5733 and the Leading Foreign Research Institute Recruitment Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology (MEST) (2011-00267).

PY - 2012/6/25

Y1 - 2012/6/25

N2 - Ga 0.6Fe 1.4O 3 is predicted to be magnetoelectric with non zero magnetization at room temperature. However, in thin films, electric properties are overshadowed by strong leakage currents. In this Letter, we show that Mg doping in Ga 0.6Fe 1.4O 3 thin films grown by pulsed laser deposition allows decreasing the leakage current density by four orders of magnitude and might simultaneously allow tuning the carriers' nature. These results suggest the possibility to develop a new class of material exhibiting room temperature magnetization, tunable transport properties, and magnetoelectric properties.

AB - Ga 0.6Fe 1.4O 3 is predicted to be magnetoelectric with non zero magnetization at room temperature. However, in thin films, electric properties are overshadowed by strong leakage currents. In this Letter, we show that Mg doping in Ga 0.6Fe 1.4O 3 thin films grown by pulsed laser deposition allows decreasing the leakage current density by four orders of magnitude and might simultaneously allow tuning the carriers' nature. These results suggest the possibility to develop a new class of material exhibiting room temperature magnetization, tunable transport properties, and magnetoelectric properties.

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