Reduced leakage currents and possible charge carriers tuning in Mg-doped Ga 0.6Fe 1.4O 3 thin films

C. Lefevre, R. H. Shin, J. H. Lee, S. H. Oh, F. Roulland, A. Thomasson, E. Autissier, C. Meny, W. Jo, N. Viart

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25 Scopus citations

Abstract

Ga 0.6Fe 1.4O 3 is predicted to be magnetoelectric with non zero magnetization at room temperature. However, in thin films, electric properties are overshadowed by strong leakage currents. In this Letter, we show that Mg doping in Ga 0.6Fe 1.4O 3 thin films grown by pulsed laser deposition allows decreasing the leakage current density by four orders of magnitude and might simultaneously allow tuning the carriers' nature. These results suggest the possibility to develop a new class of material exhibiting room temperature magnetization, tunable transport properties, and magnetoelectric properties.

Original languageEnglish
Article number262904
JournalApplied Physics Letters
Volume100
Issue number26
DOIs
StatePublished - 25 Jun 2012

Bibliographical note

Funding Information:
This work was supported by the CNRS PICS program # 5733 and the Leading Foreign Research Institute Recruitment Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology (MEST) (2011-00267).

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