Reconfigurable Dipole-Induced Resistive Switching of MoS2 Thin Layers on Nb:SrTiO3

Woo Young Yoon; Hye Jin Jin; William Jo

doi:10.1021/acsami.9b15097

Reconfigurable Dipole-Induced Resistive Switching of MoS₂ Thin Layers on Nb:SrTiO₃

Woo Young Yoon, Hye Jin Jin, William Jo

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

The controllable band gap and charge-trapping capability of MoS₂ render it suitable for use in the fabrication of various electrical devices with high-k dielectric oxides. In this study, we investigated reconfigurable resistance states in a MoS₂/Nb:SrTiO₃ heterostructure by using conductive atomic force microscopy. Low-resistance and high-resistance states were observed in all MoS₂ because of barrier height modification resulting from redistribution of charge and oxygen vacancies in the vicinity of interfaces. In a thin layer of the MoS₂ film, the carrier density was high, and layer-dependent transport properties appeared because of the charge separation in MoS₂. The hysteresis and switching voltage of the MoS₂/Nb:SrTiO₃ heterostructure could be varied by controlling the number of layers of MoS2.

Original language	English
Pages (from-to)	46344-46349
Number of pages	6
Journal	ACS Applied Materials and Interfaces
Volume	11
Issue number	49
DOIs	https://doi.org/10.1021/acsami.9b15097
State	Published - 11 Dec 2019

Keywords

MoS
MoS-oxide heterostructure
high- k dielectrics
induced dipole
reconfigurability
resistive switching

Access to Document

10.1021/acsami.9b15097

Cite this

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title = "Reconfigurable Dipole-Induced Resistive Switching of MoS2 Thin Layers on Nb:SrTiO3 ",

abstract = "The controllable band gap and charge-trapping capability of MoS2 render it suitable for use in the fabrication of various electrical devices with high-k dielectric oxides. In this study, we investigated reconfigurable resistance states in a MoS2/Nb:SrTiO3 heterostructure by using conductive atomic force microscopy. Low-resistance and high-resistance states were observed in all MoS2 because of barrier height modification resulting from redistribution of charge and oxygen vacancies in the vicinity of interfaces. In a thin layer of the MoS2 film, the carrier density was high, and layer-dependent transport properties appeared because of the charge separation in MoS2. The hysteresis and switching voltage of the MoS2/Nb:SrTiO3 heterostructure could be varied by controlling the number of layers of MoS2.",

keywords = "MoS, MoS-oxide heterostructure, high- k dielectrics, induced dipole, reconfigurability, resistive switching",

author = "Yoon, {Woo Young} and Jin, {Hye Jin} and William Jo",

note = "Funding Information: This research was supported by the Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Science, Technology, and ICT (NRF-2018R1A2B2003607) and the Ministry of Education (NRF-2018R1A6A1A03025340), Republic of Korea. This work was also supported by the Ewha Womans University Research Grant of 2019. Publisher Copyright: {\textcopyright} 2019 American Chemical Society.",

year = "2019",

month = dec,

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doi = "10.1021/acsami.9b15097",

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AU - Yoon, Woo Young

AU - Jin, Hye Jin

AU - Jo, William

N1 - Funding Information: This research was supported by the Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Science, Technology, and ICT (NRF-2018R1A2B2003607) and the Ministry of Education (NRF-2018R1A6A1A03025340), Republic of Korea. This work was also supported by the Ewha Womans University Research Grant of 2019. Publisher Copyright: © 2019 American Chemical Society.

PY - 2019/12/11

Y1 - 2019/12/11

N2 - The controllable band gap and charge-trapping capability of MoS2 render it suitable for use in the fabrication of various electrical devices with high-k dielectric oxides. In this study, we investigated reconfigurable resistance states in a MoS2/Nb:SrTiO3 heterostructure by using conductive atomic force microscopy. Low-resistance and high-resistance states were observed in all MoS2 because of barrier height modification resulting from redistribution of charge and oxygen vacancies in the vicinity of interfaces. In a thin layer of the MoS2 film, the carrier density was high, and layer-dependent transport properties appeared because of the charge separation in MoS2. The hysteresis and switching voltage of the MoS2/Nb:SrTiO3 heterostructure could be varied by controlling the number of layers of MoS2.

AB - The controllable band gap and charge-trapping capability of MoS2 render it suitable for use in the fabrication of various electrical devices with high-k dielectric oxides. In this study, we investigated reconfigurable resistance states in a MoS2/Nb:SrTiO3 heterostructure by using conductive atomic force microscopy. Low-resistance and high-resistance states were observed in all MoS2 because of barrier height modification resulting from redistribution of charge and oxygen vacancies in the vicinity of interfaces. In a thin layer of the MoS2 film, the carrier density was high, and layer-dependent transport properties appeared because of the charge separation in MoS2. The hysteresis and switching voltage of the MoS2/Nb:SrTiO3 heterostructure could be varied by controlling the number of layers of MoS2.

KW - MoS

KW - MoS-oxide heterostructure

KW - high- k dielectrics

KW - induced dipole

KW - reconfigurability

KW - resistive switching

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