Recombination in Cu(In,Ga)Se2 thin-film solar cells containing ordered vacancy compound phases

Yunae Cho, Dong Wook Kim, Se Jin Ahn, Dahyun Nam, Hyeonsik Cheong, Guk Yeong Jeong, Jihye Gwak, Jae Ho Yun

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14 Scopus citations


We investigated the transport and photovoltaic properties of Cu-deficient Cu(In1 - xGax)Se2 (CIGS) thin-film solar cells containing ordered vacancy compound (OVC) layers. Raman spectra clearly revealed that the CIGS thin films with lower Cu concentrations contained larger volumes of OVC layers. The temperature-dependent inverse ideality factor showed that the CIGS film containing more (less) OVC layers exhibited tunnelingmediated bulk (interface)-dominated recombination. The capacitance-voltage characteristics and admittance spectra showed that the CIGS cells containing more OVC layers had more uniform carrier concentration near the junction and less interfacial trap states compared with cells with less OVC layers. These results suggested that the Cu-deficiency and the resulting OVC layer formation reduced the interfacial defect density and suppressed the interface recombination processes of the CIGS solar cells.

Original languageEnglish
Pages (from-to)358-361
Number of pages4
JournalThin Solid Films
StatePublished - 1 Nov 2013

Bibliographical note

Funding Information:
This work was supported by the Converging Research Center Program ( 2012K001275 ) through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science, and Technology (MEST) and was conducted in part under the framework of Research and Development Program of the Korea Institute of Energy Research (KIER) (B3-2414-01).


  • CIGS thin film
  • Ordered vacancy compound
  • Recombination
  • Solar cells


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