Recessed Channel Dual-Gate Single Electron Transistors (RCDG-SETs) for room temperature operation

Sang Hyuk Park; Sangwoo Kang; Seongjae Cho; Dong Seup Lee; Jung Han Lee; Hong Seon Yang; Kwon Chil Kang; Joung Eob Lee; Jong Duk Lee; Byung Gook Park

doi:10.1587/transele.E92.C.647

Recessed Channel Dual-Gate Single Electron Transistors (RCDG-SETs) for room temperature operation

Sang Hyuk Park, Sangwoo Kang, Seongjae Cho, Dong Seup Lee, Jung Han Lee, Hong Seon Yang, Kwon Chil Kang, Joung Eob Lee, Jong Duk Lee, Byung Gook Park

Electronic and Electrical Engineering

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

A Recessed-Channel Dual-Gate Single Electron Transistor (RCDG-SET) which has the possibility of room temperature operation is proposed. Side gates of a RCDG-SET form electrical tunneling barriers around a recessed channel, which is newly introduced. Not only gate but also a recessed channel is self aligned to source and drain. Characteristics of a RCDG-SET are compared with those of previous DG-SETs through device simulation (SILVACO). Due to a recessed channel and a self aligned structure, MOSFET current which causes low Peak-to-Valley Current Ratio (PVCR) is suppressed. This property of a RCDG-SET is expected to contribute for room temperature operation.

Original language	English
Pages (from-to)	647-652
Number of pages	6
Journal	IEICE Transactions on Electronics
Volume	E92-C
Issue number	5
DOIs	https://doi.org/10.1587/transele.E92.C.647
State	Published - 2009

Keywords

MOSFET current suppression
Recessed channel
Single electron transistor

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10.1587/transele.E92.C.647

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title = "Recessed Channel Dual-Gate Single Electron Transistors (RCDG-SETs) for room temperature operation",

abstract = "A Recessed-Channel Dual-Gate Single Electron Transistor (RCDG-SET) which has the possibility of room temperature operation is proposed. Side gates of a RCDG-SET form electrical tunneling barriers around a recessed channel, which is newly introduced. Not only gate but also a recessed channel is self aligned to source and drain. Characteristics of a RCDG-SET are compared with those of previous DG-SETs through device simulation (SILVACO). Due to a recessed channel and a self aligned structure, MOSFET current which causes low Peak-to-Valley Current Ratio (PVCR) is suppressed. This property of a RCDG-SET is expected to contribute for room temperature operation.",

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AU - Park, Sang Hyuk

AU - Kang, Sangwoo

AU - Cho, Seongjae

AU - Lee, Dong Seup

AU - Lee, Jung Han

AU - Yang, Hong Seon

AU - Kang, Kwon Chil

AU - Lee, Joung Eob

AU - Lee, Jong Duk

AU - Park, Byung Gook

PY - 2009

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AB - A Recessed-Channel Dual-Gate Single Electron Transistor (RCDG-SET) which has the possibility of room temperature operation is proposed. Side gates of a RCDG-SET form electrical tunneling barriers around a recessed channel, which is newly introduced. Not only gate but also a recessed channel is self aligned to source and drain. Characteristics of a RCDG-SET are compared with those of previous DG-SETs through device simulation (SILVACO). Due to a recessed channel and a self aligned structure, MOSFET current which causes low Peak-to-Valley Current Ratio (PVCR) is suppressed. This property of a RCDG-SET is expected to contribute for room temperature operation.

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KW - Recessed channel

KW - Single electron transistor

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Recessed Channel Dual-Gate Single Electron Transistors (RCDG-SETs) for room temperature operation

Abstract

Keywords

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