Recessed Channel Dual-Gate Single Electron Transistors (RCDG-SETs) for room temperature operation

Sang Hyuk Park, Sangwoo Kang, Seongjae Cho, Dong Seup Lee, Jung Han Lee, Hong Seon Yang, Kwon Chil Kang, Joung Eob Lee, Jong Duk Lee, Byung Gook Park

Research output: Contribution to journalArticlepeer-review

1 Scopus citations


A Recessed-Channel Dual-Gate Single Electron Transistor (RCDG-SET) which has the possibility of room temperature operation is proposed. Side gates of a RCDG-SET form electrical tunneling barriers around a recessed channel, which is newly introduced. Not only gate but also a recessed channel is self aligned to source and drain. Characteristics of a RCDG-SET are compared with those of previous DG-SETs through device simulation (SILVACO). Due to a recessed channel and a self aligned structure, MOSFET current which causes low Peak-to-Valley Current Ratio (PVCR) is suppressed. This property of a RCDG-SET is expected to contribute for room temperature operation.

Original languageEnglish
Pages (from-to)647-652
Number of pages6
JournalIEICE Transactions on Electronics
Issue number5
StatePublished - 2009


  • MOSFET current suppression
  • Recessed channel
  • Single electron transistor


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