Recent advances in electrical doping of 2d semiconductor materials: Methods, analyses and applications

Hocheon Yoo, Keun Heo, Md Hasan Raza Ansari, Seongjae Cho

Research output: Contribution to journalReview articlepeer-review

37 Scopus citations


Two-dimensional materials have garnered interest from the perspectives of physics, materials, and applied electronics owing to their outstanding physical and chemical properties. Advances in exfoliation and synthesis technologies have enabled preparation and electrical characterization of various atomically thin films of semiconductor transition metal dichalcogenides (TMDs). Their two-dimensional structures and electromagnetic spectra coupled to bandgaps in the visible region indicate their suitability for digital electronics and optoelectronics. To further expand the potential applications of these two-dimensional semiconductor materials, technologies capable of precisely controlling the electrical properties of the material are essential. Doping has been traditionally used to effectively change the electrical and electronic properties of materials through relatively simple processes. To change the electrical properties, substances that can donate or remove electrons are added. Doping of atomically thin two-dimensional semiconductor materials is similar to that used for silicon but has a slightly different mechanism. Three main methods with different characteristics and slightly different principles are generally used. This review presents an overview of various advanced doping techniques based on the substitutional, chemical, and charge transfer molecular doping strategies of graphene and TMDs, which are the representative 2D semiconductor materials.

Original languageEnglish
Article number832
Issue number4
StatePublished - Apr 2021

Bibliographical note

Publisher Copyright:
© 2021 by the author. Licensee MDPI, Basel, Switzerland.


  • 2D semiconductor material
  • Atomically thin film
  • Electrical doping
  • Graphene
  • Transition metal dichalcogenide


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