TY - JOUR
T1 - Recent advances in electrical doping of 2d semiconductor materials
T2 - Methods, analyses and applications
AU - Yoo, Hocheon
AU - Heo, Keun
AU - Ansari, Md Hasan Raza
AU - Cho, Seongjae
N1 - Funding Information:
Funding: This research was supported by the Ministry of Trade, Industry and Energy of Korea (MOTIE) with the Korean Semiconductor Research Consortium (KSRC) through the program for development of future semiconductor devices (Grant No. 10080513) and also supported in part by the National Research Foundation of Korea (NRF) Grant funded by the Ministry of Science and ICT of Korea (MSIT) (Grant No. NRF-2020R1A2C1101647).
Publisher Copyright:
© 2021 by the author. Licensee MDPI, Basel, Switzerland.
PY - 2021/4
Y1 - 2021/4
N2 - Two-dimensional materials have garnered interest from the perspectives of physics, materials, and applied electronics owing to their outstanding physical and chemical properties. Advances in exfoliation and synthesis technologies have enabled preparation and electrical characterization of various atomically thin films of semiconductor transition metal dichalcogenides (TMDs). Their two-dimensional structures and electromagnetic spectra coupled to bandgaps in the visible region indicate their suitability for digital electronics and optoelectronics. To further expand the potential applications of these two-dimensional semiconductor materials, technologies capable of precisely controlling the electrical properties of the material are essential. Doping has been traditionally used to effectively change the electrical and electronic properties of materials through relatively simple processes. To change the electrical properties, substances that can donate or remove electrons are added. Doping of atomically thin two-dimensional semiconductor materials is similar to that used for silicon but has a slightly different mechanism. Three main methods with different characteristics and slightly different principles are generally used. This review presents an overview of various advanced doping techniques based on the substitutional, chemical, and charge transfer molecular doping strategies of graphene and TMDs, which are the representative 2D semiconductor materials.
AB - Two-dimensional materials have garnered interest from the perspectives of physics, materials, and applied electronics owing to their outstanding physical and chemical properties. Advances in exfoliation and synthesis technologies have enabled preparation and electrical characterization of various atomically thin films of semiconductor transition metal dichalcogenides (TMDs). Their two-dimensional structures and electromagnetic spectra coupled to bandgaps in the visible region indicate their suitability for digital electronics and optoelectronics. To further expand the potential applications of these two-dimensional semiconductor materials, technologies capable of precisely controlling the electrical properties of the material are essential. Doping has been traditionally used to effectively change the electrical and electronic properties of materials through relatively simple processes. To change the electrical properties, substances that can donate or remove electrons are added. Doping of atomically thin two-dimensional semiconductor materials is similar to that used for silicon but has a slightly different mechanism. Three main methods with different characteristics and slightly different principles are generally used. This review presents an overview of various advanced doping techniques based on the substitutional, chemical, and charge transfer molecular doping strategies of graphene and TMDs, which are the representative 2D semiconductor materials.
KW - 2D semiconductor material
KW - Atomically thin film
KW - Electrical doping
KW - Graphene
KW - Transition metal dichalcogenide
UR - http://www.scopus.com/inward/record.url?scp=85102874609&partnerID=8YFLogxK
U2 - 10.3390/nano11040832
DO - 10.3390/nano11040832
M3 - Review article
AN - SCOPUS:85102874609
SN - 2079-4991
VL - 11
JO - Nanomaterials
JF - Nanomaterials
IS - 4
M1 - 832
ER -