Real-time effect of electron beam on MoS₂field-effect transistors

Engineering

• Effect Transistor 100%
• Molybdenum Disulfide 100%
• Monolayers 66%
• Field-Effect Transistor 50%
• Beam Irradiation 50%
• Adsorbate 33%
• Silicon Dioxide 33%
• Interface Trap 33%
• Screening Surface 16%
• Effective Channel 16%
• Mounted System 16%
• Sio2 Layer 16%
• Frequency Noise 16%
• Gate Bias 16%
• Situ Measurement 16%
• Hole Pair 16%
• Scattering Parameters 16%
• Initial State 16%
• Scanning Electron Microscope 16%
• Carrier Mobility 16%

Material Science

• Monolayers 100%
• Transistor 100%
• Field Effect Transistor 75%
• Adsorbate 50%
• Electrical Property 25%
• Density 25%
• Carrier Mobility 25%
• Conductor 25%
• Scanning Electron Microscopy 25%