TY - GEN
T1 - Random telegraph noise in individual single-walled carbon nanotubes
AU - Jhang, Sung Ho
AU - Lee, Sang Wook
AU - Lee, Dong Su
AU - Campbell, Eleanor E.B.
AU - Roth, Siegmar
AU - Park, Yung Woo
PY - 2004
Y1 - 2004
N2 - The switching of resistance between two discrete values, known as random telegraph noise (RTN), was observed in individual single-walled carbon nanotubes (SWNTs). The RTN has been studied as a function of bias-voltage and gate-voltage as well as temperature. By analyzing the features of the RTN, we identify three different types of RTN existing in the SWNT related systems. While the RTN can be generated by the various charge traps in the vicinity of the SWNTs, the RTN for metallic SWNTs is mainly due to reversible defect motions between two metastable states, activated by inelastic scattering with electrons.
AB - The switching of resistance between two discrete values, known as random telegraph noise (RTN), was observed in individual single-walled carbon nanotubes (SWNTs). The RTN has been studied as a function of bias-voltage and gate-voltage as well as temperature. By analyzing the features of the RTN, we identify three different types of RTN existing in the SWNT related systems. While the RTN can be generated by the various charge traps in the vicinity of the SWNTs, the RTN for metallic SWNTs is mainly due to reversible defect motions between two metastable states, activated by inelastic scattering with electrons.
UR - http://www.scopus.com/inward/record.url?scp=34249943454&partnerID=8YFLogxK
U2 - 10.1557/proc-858-hh8.5
DO - 10.1557/proc-858-hh8.5
M3 - Conference contribution
AN - SCOPUS:34249943454
SN - 1558998101
SN - 9781558998100
T3 - Materials Research Society Symposium Proceedings
SP - 185
EP - 190
BT - Functional Carbon Nanotubes
PB - Materials Research Society
T2 - 2004 MRS Fall Meeting
Y2 - 29 November 2004 through 3 December 2004
ER -