Random telegraph noise in individual single-walled carbon nanotubes

Sung Ho Jhang, Sang Wook Lee, Dong Su Lee, Eleanor E.B. Campbell, Siegmar Roth, Yung Woo Park

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

5 Scopus citations


The switching of resistance between two discrete values, known as random telegraph noise (RTN), was observed in individual single-walled carbon nanotubes (SWNTs). The RTN has been studied as a function of bias-voltage and gate-voltage as well as temperature. By analyzing the features of the RTN, we identify three different types of RTN existing in the SWNT related systems. While the RTN can be generated by the various charge traps in the vicinity of the SWNTs, the RTN for metallic SWNTs is mainly due to reversible defect motions between two metastable states, activated by inelastic scattering with electrons.

Original languageEnglish
Title of host publicationFunctional Carbon Nanotubes
PublisherMaterials Research Society
Number of pages6
ISBN (Print)1558998101, 9781558998100
StatePublished - 2004
Event2004 MRS Fall Meeting - Boston, MA, United States
Duration: 29 Nov 20043 Dec 2004

Publication series

NameMaterials Research Society Symposium Proceedings
ISSN (Print)0272-9172


Conference2004 MRS Fall Meeting
Country/TerritoryUnited States
CityBoston, MA


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