Raman spectroscopy of the damages induced by arion beam etching of InSb(100) surface

Chulkyun Seok, Minkyung Choi, Sehun Park, Jinwook Jung, Yongjo Park, In Sang Yang, Euijoon Yoon

Research output: Contribution to journalArticlepeer-review

4 Scopus citations

Abstract

The strong enhancement of forbidden TO mode on Ar ion beam-etched InSb(100) surfaces was examined by Raman spectroscopy. By raising the applied RF power in Ar-ion etching from 50 to 200 W, the integrated area ratio of ITO/ILO increased from 0.05 to 0.23 and the full width at half maximum of LO peak increased from 5.46 to 7.46 cm-1. Such increases are induced by the partly disordered structure deformed by bombarded Ar ions. Raman spectroscopy could investigate the microscopic damages of the crystalline structure leading to break the Raman selection rules.

Original languageEnglish
Pages (from-to)P27-P29
JournalECS Solid State Letters
Volume3
Issue number3
DOIs
StatePublished - 2014

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