Raman spectroscopy of the damages induced by arion beam etching of InSb(100) surface

Chulkyun Seok; Minkyung Choi; Sehun Park; Jinwook Jung; Yongjo Park; In Sang Yang; Euijoon Yoon

doi:10.1149/2.009402ssl

Raman spectroscopy of the damages induced by arion beam etching of InSb(100) surface

Chulkyun Seok, Minkyung Choi, Sehun Park, Jinwook Jung, Yongjo Park, In Sang Yang, Euijoon Yoon

Department of Physics

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

The strong enhancement of forbidden TO mode on Ar ion beam-etched InSb(100) surfaces was examined by Raman spectroscopy. By raising the applied RF power in Ar-ion etching from 50 to 200 W, the integrated area ratio of ITO/ILO increased from 0.05 to 0.23 and the full width at half maximum of LO peak increased from 5.46 to 7.46 cm-1. Such increases are induced by the partly disordered structure deformed by bombarded Ar ions. Raman spectroscopy could investigate the microscopic damages of the crystalline structure leading to break the Raman selection rules.

Original language	English
Pages (from-to)	P27-P29
Journal	ECS Solid State Letters
Volume	3
Issue number	3
DOIs	https://doi.org/10.1149/2.009402ssl
State	Published - 2014

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title = "Raman spectroscopy of the damages induced by arion beam etching of InSb(100) surface",

abstract = "The strong enhancement of forbidden TO mode on Ar ion beam-etched InSb(100) surfaces was examined by Raman spectroscopy. By raising the applied RF power in Ar-ion etching from 50 to 200 W, the integrated area ratio of ITO/ILO increased from 0.05 to 0.23 and the full width at half maximum of LO peak increased from 5.46 to 7.46 cm-1. Such increases are induced by the partly disordered structure deformed by bombarded Ar ions. Raman spectroscopy could investigate the microscopic damages of the crystalline structure leading to break the Raman selection rules.",

author = "Chulkyun Seok and Minkyung Choi and Sehun Park and Jinwook Jung and Yongjo Park and Yang, {In Sang} and Euijoon Yoon",

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T1 - Raman spectroscopy of the damages induced by arion beam etching of InSb(100) surface

AU - Seok, Chulkyun

AU - Choi, Minkyung

AU - Park, Sehun

AU - Jung, Jinwook

AU - Park, Yongjo

AU - Yang, In Sang

AU - Yoon, Euijoon

PY - 2014

Y1 - 2014

N2 - The strong enhancement of forbidden TO mode on Ar ion beam-etched InSb(100) surfaces was examined by Raman spectroscopy. By raising the applied RF power in Ar-ion etching from 50 to 200 W, the integrated area ratio of ITO/ILO increased from 0.05 to 0.23 and the full width at half maximum of LO peak increased from 5.46 to 7.46 cm-1. Such increases are induced by the partly disordered structure deformed by bombarded Ar ions. Raman spectroscopy could investigate the microscopic damages of the crystalline structure leading to break the Raman selection rules.

AB - The strong enhancement of forbidden TO mode on Ar ion beam-etched InSb(100) surfaces was examined by Raman spectroscopy. By raising the applied RF power in Ar-ion etching from 50 to 200 W, the integrated area ratio of ITO/ILO increased from 0.05 to 0.23 and the full width at half maximum of LO peak increased from 5.46 to 7.46 cm-1. Such increases are induced by the partly disordered structure deformed by bombarded Ar ions. Raman spectroscopy could investigate the microscopic damages of the crystalline structure leading to break the Raman selection rules.

UR - http://www.scopus.com/inward/record.url?scp=84897795368&partnerID=8YFLogxK

U2 - 10.1149/2.009402ssl

DO - 10.1149/2.009402ssl

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VL - 3

SP - P27-P29

JO - ECS Solid State Letters

JF - ECS Solid State Letters

IS - 3

ER -

Raman spectroscopy of the damages induced by arion beam etching of InSb(100) surface

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