Quintuple layer Bi 2 Se 3 thin films directly grown on insulating SiO 2 using molecular beam epitaxy

Jeong Heum Jeon, Misun Song, Howon Kim, Won Jun Jang, Ji Yong Park, Seokhyun Yoon, Se Jong Kahng

Research output: Contribution to journalArticlepeer-review

15 Scopus citations


Topological insulator thin films on insulating SiO 2 can be used in gate tunable devices, and have been prepared using exfoliation methods, but rarely with direct-growth methods. Here, we present our study to directly grow quintuple layer Bi 2 Se 3 on insulating SiO 2 using molecular beam epitaxy. We investigated atomic structures, stoichiometry, vibration modes, and surface morphology of the grown films using X-ray diffraction, Raman spectroscopy, and scanning tunneling microscopy, confirming that the grown films were Bi 2 Se 3 quintuple layers. We then fabricated gate tunable devices using the films. Our study shows that Bi 2 Se 3 can be directly prepared on non-crystalline insulator SiO 2 .

Original languageEnglish
Pages (from-to)42-45
Number of pages4
JournalApplied Surface Science
Issue number1
StatePublished - 2014

Bibliographical note

Funding Information:
The authors gratefully acknowledge financial support from National Research Foundation of Korea, and from the Ministry of Education Science and Technology of the Korean government (Grant nos. 2008-0062237; 2010-0025301 ; 2012-0013222 ; 2012R1A1A20394080). JYP was also supported from Priority Research Centers Program (2011-0030745).

Publisher Copyright:
© 2014 Elsevier B.V. All rights reserved.


  • Bismuth selenide
  • Molecular beam epitaxy
  • Topological insulator


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