Quintuple layer Bi                         2                         Se                         3                          thin films directly grown on insulating SiO                         2                          using molecular beam epitaxy

Jeong Heum Jeon; Misun Song; Howon Kim; Won Jun Jang; Ji Yong Park; Seokhyun Yoon; Se Jong Kahng

doi:10.1016/j.apsusc.2014.07.106

Quintuple layer Bi ₂ Se ₃ thin films directly grown on insulating SiO ₂ using molecular beam epitaxy

Jeong Heum Jeon, Misun Song, Howon Kim, Won Jun Jang, Ji Yong Park, Seokhyun Yoon, Se Jong Kahng

Department of Physics

Research output: Contribution to journal › Article › peer-review

18 Scopus citations

Abstract

Topological insulator thin films on insulating SiO ₂ can be used in gate tunable devices, and have been prepared using exfoliation methods, but rarely with direct-growth methods. Here, we present our study to directly grow quintuple layer Bi ₂ Se ₃ on insulating SiO ₂ using molecular beam epitaxy. We investigated atomic structures, stoichiometry, vibration modes, and surface morphology of the grown films using X-ray diffraction, Raman spectroscopy, and scanning tunneling microscopy, confirming that the grown films were Bi ₂ Se ₃ quintuple layers. We then fabricated gate tunable devices using the films. Our study shows that Bi ₂ Se ₃ can be directly prepared on non-crystalline insulator SiO ₂ .

Original language	English
Pages (from-to)	42-45
Number of pages	4
Journal	Applied Surface Science
Volume	316
Issue number	1
DOIs	https://doi.org/10.1016/j.apsusc.2014.07.106
State	Published - 2014

Bibliographical note

Funding Information:
The authors gratefully acknowledge financial support from National Research Foundation of Korea, and from the Ministry of Education Science and Technology of the Korean government (Grant nos. 2008-0062237; 2010-0025301 ; 2012-0013222 ; 2012R1A1A20394080). JYP was also supported from Priority Research Centers Program (2011-0030745).

Publisher Copyright:
© 2014 Elsevier B.V. All rights reserved.

Keywords

Bismuth selenide
Molecular beam epitaxy
Topological insulator

Access to Document

10.1016/j.apsusc.2014.07.106

Cite this

Jeon, J. H., Song, M., Kim, H., Jang, W. J., Park, J. Y., Yoon, S., & Kahng, S. J. (2014). Quintuple layer Bi ₂ Se ₃ thin films directly grown on insulating SiO ₂ using molecular beam epitaxy Applied Surface Science, 316(1), 42-45. https://doi.org/10.1016/j.apsusc.2014.07.106

Jeon, Jeong Heum ; Song, Misun ; Kim, Howon et al. / Quintuple layer Bi ₂ Se ₃ thin films directly grown on insulating SiO ₂ using molecular beam epitaxy In: Applied Surface Science. 2014 ; Vol. 316, No. 1. pp. 42-45.

@article{8ce12df45ca94a3a864e087c4bdcf806,

title = " Quintuple layer Bi 2 Se 3 thin films directly grown on insulating SiO 2 using molecular beam epitaxy ",

abstract = " Topological insulator thin films on insulating SiO 2 can be used in gate tunable devices, and have been prepared using exfoliation methods, but rarely with direct-growth methods. Here, we present our study to directly grow quintuple layer Bi 2 Se 3 on insulating SiO 2 using molecular beam epitaxy. We investigated atomic structures, stoichiometry, vibration modes, and surface morphology of the grown films using X-ray diffraction, Raman spectroscopy, and scanning tunneling microscopy, confirming that the grown films were Bi 2 Se 3 quintuple layers. We then fabricated gate tunable devices using the films. Our study shows that Bi 2 Se 3 can be directly prepared on non-crystalline insulator SiO 2 .",

keywords = "Bismuth selenide, Molecular beam epitaxy, Topological insulator",

author = "Jeon, {Jeong Heum} and Misun Song and Howon Kim and Jang, {Won Jun} and Park, {Ji Yong} and Seokhyun Yoon and Kahng, {Se Jong}",

note = "Funding Information: The authors gratefully acknowledge financial support from National Research Foundation of Korea, and from the Ministry of Education Science and Technology of the Korean government (Grant nos. 2008-0062237; 2010-0025301 ; 2012-0013222 ; 2012R1A1A20394080). JYP was also supported from Priority Research Centers Program (2011-0030745). Publisher Copyright: {\textcopyright} 2014 Elsevier B.V. All rights reserved.",

year = "2014",

doi = "10.1016/j.apsusc.2014.07.106",

language = "English",

volume = "316",

pages = "42--45",

journal = "Applied Surface Science",

issn = "0169-4332",

publisher = "Elsevier",

number = "1",

}

Jeon, JH, Song, M, Kim, H, Jang, WJ, Park, JY, Yoon, S & Kahng, SJ 2014, ' Quintuple layer Bi ₂ Se ₃ thin films directly grown on insulating SiO ₂ using molecular beam epitaxy ', Applied Surface Science, vol. 316, no. 1, pp. 42-45. https://doi.org/10.1016/j.apsusc.2014.07.106

Quintuple layer Bi ₂ Se ₃ thin films directly grown on insulating SiO ₂ using molecular beam epitaxy . / Jeon, Jeong Heum; Song, Misun; Kim, Howon et al.
In: Applied Surface Science, Vol. 316, No. 1, 2014, p. 42-45.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Quintuple layer Bi 2 Se 3 thin films directly grown on insulating SiO 2 using molecular beam epitaxy

AU - Jeon, Jeong Heum

AU - Song, Misun

AU - Kim, Howon

AU - Jang, Won Jun

AU - Park, Ji Yong

AU - Yoon, Seokhyun

AU - Kahng, Se Jong

N1 - Funding Information: The authors gratefully acknowledge financial support from National Research Foundation of Korea, and from the Ministry of Education Science and Technology of the Korean government (Grant nos. 2008-0062237; 2010-0025301 ; 2012-0013222 ; 2012R1A1A20394080). JYP was also supported from Priority Research Centers Program (2011-0030745). Publisher Copyright: © 2014 Elsevier B.V. All rights reserved.

PY - 2014

Y1 - 2014

N2 - Topological insulator thin films on insulating SiO 2 can be used in gate tunable devices, and have been prepared using exfoliation methods, but rarely with direct-growth methods. Here, we present our study to directly grow quintuple layer Bi 2 Se 3 on insulating SiO 2 using molecular beam epitaxy. We investigated atomic structures, stoichiometry, vibration modes, and surface morphology of the grown films using X-ray diffraction, Raman spectroscopy, and scanning tunneling microscopy, confirming that the grown films were Bi 2 Se 3 quintuple layers. We then fabricated gate tunable devices using the films. Our study shows that Bi 2 Se 3 can be directly prepared on non-crystalline insulator SiO 2 .

AB - Topological insulator thin films on insulating SiO 2 can be used in gate tunable devices, and have been prepared using exfoliation methods, but rarely with direct-growth methods. Here, we present our study to directly grow quintuple layer Bi 2 Se 3 on insulating SiO 2 using molecular beam epitaxy. We investigated atomic structures, stoichiometry, vibration modes, and surface morphology of the grown films using X-ray diffraction, Raman spectroscopy, and scanning tunneling microscopy, confirming that the grown films were Bi 2 Se 3 quintuple layers. We then fabricated gate tunable devices using the films. Our study shows that Bi 2 Se 3 can be directly prepared on non-crystalline insulator SiO 2 .

KW - Bismuth selenide

KW - Molecular beam epitaxy

KW - Topological insulator

UR - http://www.scopus.com/inward/record.url?scp=84922560650&partnerID=8YFLogxK

U2 - 10.1016/j.apsusc.2014.07.106

DO - 10.1016/j.apsusc.2014.07.106

M3 - Article

AN - SCOPUS:84922560650

SN - 0169-4332

VL - 316

SP - 42

EP - 45

JO - Applied Surface Science

JF - Applied Surface Science

IS - 1

ER -

Jeon JH, Song M, Kim H, Jang WJ, Park JY, Yoon S et al. Quintuple layer Bi ₂ Se ₃ thin films directly grown on insulating SiO ₂ using molecular beam epitaxy Applied Surface Science. 2014;316(1):42-45. doi: 10.1016/j.apsusc.2014.07.106