Quaternary semiconductors with positive crystal field splitting: Potential high-efficiency spin-polarized electron sources

Shiyou Chen; Wan Jian Yin; Ji Hui Yang; X. G. Gong; Aron Walsh; Su Huai Wei

doi:10.1063/1.3193662

Quaternary semiconductors with positive crystal field splitting: Potential high-efficiency spin-polarized electron sources

Shiyou Chen, Wan Jian Yin, Ji Hui Yang, X. G. Gong, Aron Walsh, Su Huai Wei

Department of Physics

Research output: Contribution to journal › Article › peer-review

17 Scopus citations

Abstract

Traditional high efficiency spin-polarized electron sources (SPES) consist mainly of binary or pseudobinary zinc-blende GaAs based materials, whereas their ternary analogs II-IV-V₂ (II=Zn, Cd, IV=Si, Ge, Sn, and V=As) as well as II-VI ternary analogs I-III-VI₂ (I=Cu, Ag, III=Al, Ga, In, and VI=Se) have not drawn wide attention because their crystal field splitting Δ_CF near the valence band maximum is either negative or close to zero in their ground state chalcopyrite structure. Using first-principles calculations, we show that some derivative quaternary I-III-II₂ -VI₄ and II-IV-III₂ -V₄ compounds can have coherent ground state stannite or kesterite structures with large and positive ΔCF due to their increased chemical and structural flexibility. We propose that ZnSiAl₂ As₄ and CdGeAl₂ As₄ in the stannite structure, and ZnSnGa₂ As₄ and CuAlCd ₂Se₄ in the kesterite structure could be good candidate SPES materials with high polarization and quantum efficiency.

Original language	English
Article number	052102
Journal	Applied Physics Letters
Volume	95
Issue number	5
DOIs	https://doi.org/10.1063/1.3193662
State	Published - 2009

Bibliographical note

Funding Information:
The work in Fudan is partially supported by the National Sciences Foundation of China, the Basic Research Program of MOE and Shanghai, and the Special Funds for Major State Basic Research. Computations were performed in the Supercomputer Center of FU and CCS. The work at NREL is funded by the U.S. Department of Energy under Contract No. DE-AC36-08GO28308.

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title = "Quaternary semiconductors with positive crystal field splitting: Potential high-efficiency spin-polarized electron sources",

abstract = "Traditional high efficiency spin-polarized electron sources (SPES) consist mainly of binary or pseudobinary zinc-blende GaAs based materials, whereas their ternary analogs II-IV-V2 (II=Zn, Cd, IV=Si, Ge, Sn, and V=As) as well as II-VI ternary analogs I-III-VI2 (I=Cu, Ag, III=Al, Ga, In, and VI=Se) have not drawn wide attention because their crystal field splitting ΔCF near the valence band maximum is either negative or close to zero in their ground state chalcopyrite structure. Using first-principles calculations, we show that some derivative quaternary I-III-II2 -VI4 and II-IV-III2 -V4 compounds can have coherent ground state stannite or kesterite structures with large and positive ΔCF due to their increased chemical and structural flexibility. We propose that ZnSiAl2 As4 and CdGeAl2 As4 in the stannite structure, and ZnSnGa2 As4 and CuAlCd 2Se4 in the kesterite structure could be good candidate SPES materials with high polarization and quantum efficiency.",

author = "Shiyou Chen and Yin, {Wan Jian} and Yang, {Ji Hui} and Gong, {X. G.} and Aron Walsh and Wei, {Su Huai}",

note = "Funding Information: The work in Fudan is partially supported by the National Sciences Foundation of China, the Basic Research Program of MOE and Shanghai, and the Special Funds for Major State Basic Research. Computations were performed in the Supercomputer Center of FU and CCS. The work at NREL is funded by the U.S. Department of Energy under Contract No. DE-AC36-08GO28308. ",

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doi = "10.1063/1.3193662",

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T1 - Quaternary semiconductors with positive crystal field splitting

T2 - Potential high-efficiency spin-polarized electron sources

AU - Chen, Shiyou

AU - Yin, Wan Jian

AU - Yang, Ji Hui

AU - Gong, X. G.

AU - Walsh, Aron

AU - Wei, Su Huai

N1 - Funding Information: The work in Fudan is partially supported by the National Sciences Foundation of China, the Basic Research Program of MOE and Shanghai, and the Special Funds for Major State Basic Research. Computations were performed in the Supercomputer Center of FU and CCS. The work at NREL is funded by the U.S. Department of Energy under Contract No. DE-AC36-08GO28308.

PY - 2009

Y1 - 2009

N2 - Traditional high efficiency spin-polarized electron sources (SPES) consist mainly of binary or pseudobinary zinc-blende GaAs based materials, whereas their ternary analogs II-IV-V2 (II=Zn, Cd, IV=Si, Ge, Sn, and V=As) as well as II-VI ternary analogs I-III-VI2 (I=Cu, Ag, III=Al, Ga, In, and VI=Se) have not drawn wide attention because their crystal field splitting ΔCF near the valence band maximum is either negative or close to zero in their ground state chalcopyrite structure. Using first-principles calculations, we show that some derivative quaternary I-III-II2 -VI4 and II-IV-III2 -V4 compounds can have coherent ground state stannite or kesterite structures with large and positive ΔCF due to their increased chemical and structural flexibility. We propose that ZnSiAl2 As4 and CdGeAl2 As4 in the stannite structure, and ZnSnGa2 As4 and CuAlCd 2Se4 in the kesterite structure could be good candidate SPES materials with high polarization and quantum efficiency.

AB - Traditional high efficiency spin-polarized electron sources (SPES) consist mainly of binary or pseudobinary zinc-blende GaAs based materials, whereas their ternary analogs II-IV-V2 (II=Zn, Cd, IV=Si, Ge, Sn, and V=As) as well as II-VI ternary analogs I-III-VI2 (I=Cu, Ag, III=Al, Ga, In, and VI=Se) have not drawn wide attention because their crystal field splitting ΔCF near the valence band maximum is either negative or close to zero in their ground state chalcopyrite structure. Using first-principles calculations, we show that some derivative quaternary I-III-II2 -VI4 and II-IV-III2 -V4 compounds can have coherent ground state stannite or kesterite structures with large and positive ΔCF due to their increased chemical and structural flexibility. We propose that ZnSiAl2 As4 and CdGeAl2 As4 in the stannite structure, and ZnSnGa2 As4 and CuAlCd 2Se4 in the kesterite structure could be good candidate SPES materials with high polarization and quantum efficiency.

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Quaternary semiconductors with positive crystal field splitting: Potential high-efficiency spin-polarized electron sources

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