Quantum-dot-sensitized solar cell with unprecedentedly high photocurrent

Jin Wook Lee; Dae Yong Son; Tae Kyu Ahn; Hee Won Shin; In Young Kim; Seong Ju Hwang; Min Jae Ko; Soohwan Sul; Hyouksoo Han; Nam Gyu Park

doi:10.1038/srep01050

Quantum-dot-sensitized solar cell with unprecedentedly high photocurrent

Jin Wook Lee
, Dae Yong Son
, Tae Kyu Ahn
, Hee Won Shin
, In Young Kim
, Seong Ju Hwang
, Min Jae Ko
, Soohwan Sul
, Hyouksoo Han
, Nam Gyu Park

Department of Chemistry & Nanoscience

Research output: Contribution to journal › Article › peer-review

276 Scopus citations

Abstract

The reported photocurrent density (J SC) of PbS quantum dot (QD)-sensitized solar cell was less than 19 mA/cm² despite the capability to generate 38 mA/cm², which results from inefficient electron injection and fast charge recombination. Here, we report on a PbS:Hg QD-sensitized solar cell with an unprecedentedly high J SC of 30 mA/cm². By Hg ²⁺ doping into PbS, J SC is almost doubled with improved stability. Femtosecond transient study confirms that the improved J SC is due to enhanced electron injection and suppressed charge recombination. EXAFS reveals that Pb-S bond is reinforced and structural disorder is reduced by interstitially incorporated Hg²⁺, which is responsible for the enhanced electron injection, suppressed recombination and stability. Thanks to the extremely high J SC, power conversion efficiency of 5.6% is demonstrated at one sun illumination.

Original language	English
Article number	1050
Journal	Scientific Reports
Volume	3
DOIs	https://doi.org/10.1038/srep01050
State	Published - 2013

Bibliographical note

Funding Information:
This work was supported by the National Research Foundation of Korea (NRF) grant funded by the Ministry of Education, Science and Technology (MEST) of Korea under contracts No. 2012-0005601, R31-2008-10029 (WCU program) and the Global Frontier R&D Program on Center for Multiscale Energy System. J.-W.L. is grateful to global PhD fellowship grant from NRF under contract No. 2011-0008000. The experiments at Pohang Accelerator Laboratory (PAN) were supported in part by MEST and POSTECH.

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title = "Quantum-dot-sensitized solar cell with unprecedentedly high photocurrent",

abstract = "The reported photocurrent density (J SC) of PbS quantum dot (QD)-sensitized solar cell was less than 19 mA/cm2 despite the capability to generate 38 mA/cm2, which results from inefficient electron injection and fast charge recombination. Here, we report on a PbS:Hg QD-sensitized solar cell with an unprecedentedly high J SC of 30 mA/cm2. By Hg 2+ doping into PbS, J SC is almost doubled with improved stability. Femtosecond transient study confirms that the improved J SC is due to enhanced electron injection and suppressed charge recombination. EXAFS reveals that Pb-S bond is reinforced and structural disorder is reduced by interstitially incorporated Hg2+, which is responsible for the enhanced electron injection, suppressed recombination and stability. Thanks to the extremely high J SC, power conversion efficiency of 5.6\% is demonstrated at one sun illumination.",

author = "Lee, \{Jin Wook\} and Son, \{Dae Yong\} and Ahn, \{Tae Kyu\} and Shin, \{Hee Won\} and Kim, \{In Young\} and Hwang, \{Seong Ju\} and Ko, \{Min Jae\} and Soohwan Sul and Hyouksoo Han and Park, \{Nam Gyu\}",

note = "Funding Information: This work was supported by the National Research Foundation of Korea (NRF) grant funded by the Ministry of Education, Science and Technology (MEST) of Korea under contracts No. 2012-0005601, R31-2008-10029 (WCU program) and the Global Frontier R\&D Program on Center for Multiscale Energy System. J.-W.L. is grateful to global PhD fellowship grant from NRF under contract No. 2011-0008000. The experiments at Pohang Accelerator Laboratory (PAN) were supported in part by MEST and POSTECH.",

year = "2013",

doi = "10.1038/srep01050",

language = "English",

volume = "3",

journal = "Scientific Reports",

issn = "2045-2322",

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T1 - Quantum-dot-sensitized solar cell with unprecedentedly high photocurrent

AU - Lee, Jin Wook

AU - Son, Dae Yong

AU - Ahn, Tae Kyu

AU - Shin, Hee Won

AU - Kim, In Young

AU - Hwang, Seong Ju

AU - Ko, Min Jae

AU - Sul, Soohwan

AU - Han, Hyouksoo

AU - Park, Nam Gyu

N1 - Funding Information: This work was supported by the National Research Foundation of Korea (NRF) grant funded by the Ministry of Education, Science and Technology (MEST) of Korea under contracts No. 2012-0005601, R31-2008-10029 (WCU program) and the Global Frontier R&D Program on Center for Multiscale Energy System. J.-W.L. is grateful to global PhD fellowship grant from NRF under contract No. 2011-0008000. The experiments at Pohang Accelerator Laboratory (PAN) were supported in part by MEST and POSTECH.

PY - 2013

Y1 - 2013

N2 - The reported photocurrent density (J SC) of PbS quantum dot (QD)-sensitized solar cell was less than 19 mA/cm2 despite the capability to generate 38 mA/cm2, which results from inefficient electron injection and fast charge recombination. Here, we report on a PbS:Hg QD-sensitized solar cell with an unprecedentedly high J SC of 30 mA/cm2. By Hg 2+ doping into PbS, J SC is almost doubled with improved stability. Femtosecond transient study confirms that the improved J SC is due to enhanced electron injection and suppressed charge recombination. EXAFS reveals that Pb-S bond is reinforced and structural disorder is reduced by interstitially incorporated Hg2+, which is responsible for the enhanced electron injection, suppressed recombination and stability. Thanks to the extremely high J SC, power conversion efficiency of 5.6% is demonstrated at one sun illumination.

AB - The reported photocurrent density (J SC) of PbS quantum dot (QD)-sensitized solar cell was less than 19 mA/cm2 despite the capability to generate 38 mA/cm2, which results from inefficient electron injection and fast charge recombination. Here, we report on a PbS:Hg QD-sensitized solar cell with an unprecedentedly high J SC of 30 mA/cm2. By Hg 2+ doping into PbS, J SC is almost doubled with improved stability. Femtosecond transient study confirms that the improved J SC is due to enhanced electron injection and suppressed charge recombination. EXAFS reveals that Pb-S bond is reinforced and structural disorder is reduced by interstitially incorporated Hg2+, which is responsible for the enhanced electron injection, suppressed recombination and stability. Thanks to the extremely high J SC, power conversion efficiency of 5.6% is demonstrated at one sun illumination.

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DO - 10.1038/srep01050

M3 - Article

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SN - 2045-2322

VL - 3

JO - Scientific Reports

JF - Scientific Reports

M1 - 1050

ER -

Quantum-dot-sensitized solar cell with unprecedentedly high photocurrent

Abstract

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