Quantum-dot-sensitized solar cell with unprecedentedly high photocurrent

Jin Wook Lee; Dae Yong Son; Tae Kyu Ahn; Hee Won Shin; In Young Kim; Seong Ju Hwang; Min Jae Ko; Soohwan Sul; Hyouksoo Han; Nam Gyu Park

doi:10.1038/srep01050

Quantum-dot-sensitized solar cell with unprecedentedly high photocurrent

Jin Wook Lee, Dae Yong Son, Tae Kyu Ahn, Hee Won Shin, In Young Kim, Seong Ju Hwang, Min Jae Ko, Soohwan Sul, Hyouksoo Han, Nam Gyu Park

Department of Chemistry & Nanoscience

Research output: Contribution to journal › Article › peer-review

268 Scopus citations

Abstract

The reported photocurrent density (J SC) of PbS quantum dot (QD)-sensitized solar cell was less than 19 mA/cm² despite the capability to generate 38 mA/cm², which results from inefficient electron injection and fast charge recombination. Here, we report on a PbS:Hg QD-sensitized solar cell with an unprecedentedly high J SC of 30 mA/cm². By Hg ²⁺ doping into PbS, J SC is almost doubled with improved stability. Femtosecond transient study confirms that the improved J SC is due to enhanced electron injection and suppressed charge recombination. EXAFS reveals that Pb-S bond is reinforced and structural disorder is reduced by interstitially incorporated Hg²⁺, which is responsible for the enhanced electron injection, suppressed recombination and stability. Thanks to the extremely high J SC, power conversion efficiency of 5.6% is demonstrated at one sun illumination.

Original language	English
Article number	1050
Journal	Scientific Reports
Volume	3
DOIs	https://doi.org/10.1038/srep01050
State	Published - 2013

Bibliographical note

Funding Information:
This work was supported by the National Research Foundation of Korea (NRF) grant funded by the Ministry of Education, Science and Technology (MEST) of Korea under contracts No. 2012-0005601, R31-2008-10029 (WCU program) and the Global Frontier R&D Program on Center for Multiscale Energy System. J.-W.L. is grateful to global PhD fellowship grant from NRF under contract No. 2011-0008000. The experiments at Pohang Accelerator Laboratory (PAN) were supported in part by MEST and POSTECH.

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title = "Quantum-dot-sensitized solar cell with unprecedentedly high photocurrent",

abstract = "The reported photocurrent density (J SC) of PbS quantum dot (QD)-sensitized solar cell was less than 19 mA/cm2 despite the capability to generate 38 mA/cm2, which results from inefficient electron injection and fast charge recombination. Here, we report on a PbS:Hg QD-sensitized solar cell with an unprecedentedly high J SC of 30 mA/cm2. By Hg 2+ doping into PbS, J SC is almost doubled with improved stability. Femtosecond transient study confirms that the improved J SC is due to enhanced electron injection and suppressed charge recombination. EXAFS reveals that Pb-S bond is reinforced and structural disorder is reduced by interstitially incorporated Hg2+, which is responsible for the enhanced electron injection, suppressed recombination and stability. Thanks to the extremely high J SC, power conversion efficiency of 5.6% is demonstrated at one sun illumination.",

author = "Lee, {Jin Wook} and Son, {Dae Yong} and Ahn, {Tae Kyu} and Shin, {Hee Won} and Kim, {In Young} and Hwang, {Seong Ju} and Ko, {Min Jae} and Soohwan Sul and Hyouksoo Han and Park, {Nam Gyu}",

note = "Funding Information: This work was supported by the National Research Foundation of Korea (NRF) grant funded by the Ministry of Education, Science and Technology (MEST) of Korea under contracts No. 2012-0005601, R31-2008-10029 (WCU program) and the Global Frontier R&D Program on Center for Multiscale Energy System. J.-W.L. is grateful to global PhD fellowship grant from NRF under contract No. 2011-0008000. The experiments at Pohang Accelerator Laboratory (PAN) were supported in part by MEST and POSTECH.",

year = "2013",

doi = "10.1038/srep01050",

language = "English",

volume = "3",

journal = "Scientific Reports",

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AU - Lee, Jin Wook

AU - Son, Dae Yong

AU - Ahn, Tae Kyu

AU - Shin, Hee Won

AU - Kim, In Young

AU - Hwang, Seong Ju

AU - Ko, Min Jae

AU - Sul, Soohwan

AU - Han, Hyouksoo

AU - Park, Nam Gyu

N1 - Funding Information: This work was supported by the National Research Foundation of Korea (NRF) grant funded by the Ministry of Education, Science and Technology (MEST) of Korea under contracts No. 2012-0005601, R31-2008-10029 (WCU program) and the Global Frontier R&D Program on Center for Multiscale Energy System. J.-W.L. is grateful to global PhD fellowship grant from NRF under contract No. 2011-0008000. The experiments at Pohang Accelerator Laboratory (PAN) were supported in part by MEST and POSTECH.

PY - 2013

Y1 - 2013

N2 - The reported photocurrent density (J SC) of PbS quantum dot (QD)-sensitized solar cell was less than 19 mA/cm2 despite the capability to generate 38 mA/cm2, which results from inefficient electron injection and fast charge recombination. Here, we report on a PbS:Hg QD-sensitized solar cell with an unprecedentedly high J SC of 30 mA/cm2. By Hg 2+ doping into PbS, J SC is almost doubled with improved stability. Femtosecond transient study confirms that the improved J SC is due to enhanced electron injection and suppressed charge recombination. EXAFS reveals that Pb-S bond is reinforced and structural disorder is reduced by interstitially incorporated Hg2+, which is responsible for the enhanced electron injection, suppressed recombination and stability. Thanks to the extremely high J SC, power conversion efficiency of 5.6% is demonstrated at one sun illumination.

AB - The reported photocurrent density (J SC) of PbS quantum dot (QD)-sensitized solar cell was less than 19 mA/cm2 despite the capability to generate 38 mA/cm2, which results from inefficient electron injection and fast charge recombination. Here, we report on a PbS:Hg QD-sensitized solar cell with an unprecedentedly high J SC of 30 mA/cm2. By Hg 2+ doping into PbS, J SC is almost doubled with improved stability. Femtosecond transient study confirms that the improved J SC is due to enhanced electron injection and suppressed charge recombination. EXAFS reveals that Pb-S bond is reinforced and structural disorder is reduced by interstitially incorporated Hg2+, which is responsible for the enhanced electron injection, suppressed recombination and stability. Thanks to the extremely high J SC, power conversion efficiency of 5.6% is demonstrated at one sun illumination.

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VL - 3

JO - Scientific Reports

JF - Scientific Reports

M1 - 1050

ER -

Quantum-dot-sensitized solar cell with unprecedentedly high photocurrent

Abstract

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