Bi4Ti3O12 thin films have been grown on indium tin oxide coated glass by pulsed laser deposition. The films are rapidly thermal annealed at 650°C in various kinds of ambients. X-ray diffraction and scanning electron microscopy are used to investigate crystallization and microstructures, respectively. Using Auger electron microscopy, chemical compositions and depth profiles are examined. Optical and current-voltage characteristics measurements of the films show that their transmittance and leakage current behaviors are strongly dependent upon the microstructures. O2 partial pressure in the rapid thermal annealing process is found to be an important parameter which determines crystallization, microstructures, and leakage current behaviors of the Bi4Ti3O12 thin films.
|Number of pages||6|
|Journal||Materials Research Society Symposium - Proceedings|
|State||Published - 1994|
|Event||Proceedings of the 1994 MRS Spring Meeting - San Francisco, CA, USA|
Duration: 5 Apr 1994 → 7 Apr 1994