Pulsed laser deposition of Bi4Ti3O12 thin films on sapphire substrates

William Jo, T. W. Noh

Research output: Contribution to journalConference articlepeer-review

1 Scopus citations


Using pulsed laser deposition, Bi4Ti3O12 thin films were grown on (0001) and (1102) surfaces of Al2O3. Substrate temperature from 700 to 800 °C and oxygen pressure from 50 to 1000 mtorr were varied, and their effects on Bi4Ti3O12 film growth behavior was investigated. Only for a narrow range of deposition parameters, can highly oriented Bi4Ti3O12(104) films be grown on Al2O3(0001). Further, epitaxial BTO(001) films can be grown on Al2O3(1102). The growth behavior of preferential BTO film orientations can be explained in terms of atomic arrangements in the Bi4Ti3O12 and the Al2O3 planes.

Original languageEnglish
Pages (from-to)27-32
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
StatePublished - 1995
EventProceedings of the 1994 MRS Fall Meeting - Boston, MA, USA
Duration: 29 Nov 19942 Dec 1994


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