Pulsed laser deposition of Bi4Ti3O12 thin films on sapphire substrates

William Jo; T. W. Noh

Pulsed laser deposition of Bi₄Ti₃O₁₂ thin films on sapphire substrates

William Jo, T. W. Noh

Department of Physics

Research output: Contribution to journal › Conference article › peer-review

1 Scopus citations

Abstract

Using pulsed laser deposition, Bi₄Ti₃O₁₂ thin films were grown on (0001) and (1102) surfaces of Al₂O₃. Substrate temperature from 700 to 800 °C and oxygen pressure from 50 to 1000 mtorr were varied, and their effects on Bi₄Ti₃O₁₂ film growth behavior was investigated. Only for a narrow range of deposition parameters, can highly oriented Bi₄Ti₃O₁₂(104) films be grown on Al₂O₃(0001). Further, epitaxial BTO(001) films can be grown on Al₂O₃(1102). The growth behavior of preferential BTO film orientations can be explained in terms of atomic arrangements in the Bi₄Ti₃O₁₂ and the Al₂O₃ planes.

Original language	English
Pages (from-to)	27-32
Number of pages	6
Journal	Materials Research Society Symposium - Proceedings
Volume	361
State	Published - 1995
Event	Proceedings of the 1994 MRS Fall Meeting - Boston, MA, USA Duration: 29 Nov 1994 → 2 Dec 1994

Cite this

@article{289a055abd02471d963639d19fbd6f28,

title = "Pulsed laser deposition of Bi4Ti3O12 thin films on sapphire substrates",

abstract = "Using pulsed laser deposition, Bi4Ti3O12 thin films were grown on (0001) and (1102) surfaces of Al2O3. Substrate temperature from 700 to 800 °C and oxygen pressure from 50 to 1000 mtorr were varied, and their effects on Bi4Ti3O12 film growth behavior was investigated. Only for a narrow range of deposition parameters, can highly oriented Bi4Ti3O12(104) films be grown on Al2O3(0001). Further, epitaxial BTO(001) films can be grown on Al2O3(1102). The growth behavior of preferential BTO film orientations can be explained in terms of atomic arrangements in the Bi4Ti3O12 and the Al2O3 planes.",

author = "William Jo and Noh, {T. W.}",

year = "1995",

language = "English",

volume = "361",

pages = "27--32",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

note = "Proceedings of the 1994 MRS Fall Meeting ; Conference date: 29-11-1994 Through 02-12-1994",

}

TY - JOUR

T1 - Pulsed laser deposition of Bi4Ti3O12 thin films on sapphire substrates

AU - Jo, William

AU - Noh, T. W.

PY - 1995

Y1 - 1995

N2 - Using pulsed laser deposition, Bi4Ti3O12 thin films were grown on (0001) and (1102) surfaces of Al2O3. Substrate temperature from 700 to 800 °C and oxygen pressure from 50 to 1000 mtorr were varied, and their effects on Bi4Ti3O12 film growth behavior was investigated. Only for a narrow range of deposition parameters, can highly oriented Bi4Ti3O12(104) films be grown on Al2O3(0001). Further, epitaxial BTO(001) films can be grown on Al2O3(1102). The growth behavior of preferential BTO film orientations can be explained in terms of atomic arrangements in the Bi4Ti3O12 and the Al2O3 planes.

AB - Using pulsed laser deposition, Bi4Ti3O12 thin films were grown on (0001) and (1102) surfaces of Al2O3. Substrate temperature from 700 to 800 °C and oxygen pressure from 50 to 1000 mtorr were varied, and their effects on Bi4Ti3O12 film growth behavior was investigated. Only for a narrow range of deposition parameters, can highly oriented Bi4Ti3O12(104) films be grown on Al2O3(0001). Further, epitaxial BTO(001) films can be grown on Al2O3(1102). The growth behavior of preferential BTO film orientations can be explained in terms of atomic arrangements in the Bi4Ti3O12 and the Al2O3 planes.

UR - http://www.scopus.com/inward/record.url?scp=0029212516&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0029212516

SN - 0272-9172

VL - 361

SP - 27

EP - 32

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - Proceedings of the 1994 MRS Fall Meeting

Y2 - 29 November 1994 through 2 December 1994

ER -

Pulsed laser deposition of Bi4Ti3O12 thin films on sapphire substrates

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Pulsed laser deposition of Bi₄Ti₃O₁₂ thin films on sapphire substrates