Pulsed laser deposition of Bi                         2                         Te                         3                          thermoelectric films

A. Bailini; F. Donati; M. Zamboni; V. Russo; M. Passoni; C. S. Casari; A. Li Bassi; C. E. Bottani

doi:10.1016/j.apsusc.2007.09.039

Pulsed laser deposition of Bi ₂ Te ₃ thermoelectric films

A. Bailini, F. Donati, M. Zamboni, V. Russo, M. Passoni, C. S. Casari, A. Li Bassi, C. E. Bottani

Department of Physics

Research output: Contribution to journal › Article › peer-review

88 Scopus citations

Abstract

Bi ₂ Te ₃ is one of the most used materials for thermoelectric applications at ambient temperature. An improvement of thermoelectric performances through a suitable modification of electron and phonon transport mechanisms is predicted for low dimensional or nanostructured systems, but this requires a control of the material structure down to the nanoscale. We show that pulsed laser deposition provides control on film composition, phase and structure, necessary for a comprehension of the relationship between structure and thermoelectric properties. We have explored the role of deposition temperature, background inert gas type and pressure, laser fluence and target-to-substrate distance and we found the experimental condition ranges to obtain crystalline films containing the Bi ₂ Te ₃ phase only, by comparing energy dispersive X-ray spectroscopy, Raman spectroscopy and X-ray diffraction analysis. Variations of substrate temperature and deposition gas pressure prove to be crucial also for the control of film morphology and crystallinity. Substrate type has no influence on film stoichiometry and crystallinity, but highly oriented growth can be achieved on mica due to van der Waals epitaxy.

Original language	English
Pages (from-to)	1249-1254
Number of pages	6
Journal	Applied Surface Science
Volume	254
Issue number	4
DOIs	https://doi.org/10.1016/j.apsusc.2007.09.039
State	Published - 15 Dec 2007

Keywords

Bi Te
Pulsed laser deposition (PLD)
Raman spectroscopy
Thermoelectric thin films
X-ray diffraction

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10.1016/j.apsusc.2007.09.039

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Bailini, A., Donati, F., Zamboni, M., Russo, V., Passoni, M., Casari, C. S., Li Bassi, A., & Bottani, C. E. (2007). Pulsed laser deposition of Bi ₂ Te ₃ thermoelectric films Applied Surface Science, 254(4), 1249-1254. https://doi.org/10.1016/j.apsusc.2007.09.039

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title = " Pulsed laser deposition of Bi 2 Te 3 thermoelectric films ",

abstract = " Bi 2 Te 3 is one of the most used materials for thermoelectric applications at ambient temperature. An improvement of thermoelectric performances through a suitable modification of electron and phonon transport mechanisms is predicted for low dimensional or nanostructured systems, but this requires a control of the material structure down to the nanoscale. We show that pulsed laser deposition provides control on film composition, phase and structure, necessary for a comprehension of the relationship between structure and thermoelectric properties. We have explored the role of deposition temperature, background inert gas type and pressure, laser fluence and target-to-substrate distance and we found the experimental condition ranges to obtain crystalline films containing the Bi 2 Te 3 phase only, by comparing energy dispersive X-ray spectroscopy, Raman spectroscopy and X-ray diffraction analysis. Variations of substrate temperature and deposition gas pressure prove to be crucial also for the control of film morphology and crystallinity. Substrate type has no influence on film stoichiometry and crystallinity, but highly oriented growth can be achieved on mica due to van der Waals epitaxy.",

keywords = "Bi Te, Pulsed laser deposition (PLD), Raman spectroscopy, Thermoelectric thin films, X-ray diffraction",

author = "A. Bailini and F. Donati and M. Zamboni and V. Russo and M. Passoni and Casari, {C. S.} and {Li Bassi}, A. and Bottani, {C. E.}",

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Bailini, A, Donati, F, Zamboni, M, Russo, V, Passoni, M, Casari, CS, Li Bassi, A & Bottani, CE 2007, ' Pulsed laser deposition of Bi ₂ Te ₃ thermoelectric films ', Applied Surface Science, vol. 254, no. 4, pp. 1249-1254. https://doi.org/10.1016/j.apsusc.2007.09.039

Pulsed laser deposition of Bi ₂ Te ₃ thermoelectric films . / Bailini, A.; Donati, F.; Zamboni, M. et al.
In: Applied Surface Science, Vol. 254, No. 4, 15.12.2007, p. 1249-1254.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Pulsed laser deposition of Bi 2 Te 3 thermoelectric films

AU - Bailini, A.

AU - Donati, F.

AU - Zamboni, M.

AU - Russo, V.

AU - Passoni, M.

AU - Casari, C. S.

AU - Li Bassi, A.

AU - Bottani, C. E.

PY - 2007/12/15

Y1 - 2007/12/15

N2 - Bi 2 Te 3 is one of the most used materials for thermoelectric applications at ambient temperature. An improvement of thermoelectric performances through a suitable modification of electron and phonon transport mechanisms is predicted for low dimensional or nanostructured systems, but this requires a control of the material structure down to the nanoscale. We show that pulsed laser deposition provides control on film composition, phase and structure, necessary for a comprehension of the relationship between structure and thermoelectric properties. We have explored the role of deposition temperature, background inert gas type and pressure, laser fluence and target-to-substrate distance and we found the experimental condition ranges to obtain crystalline films containing the Bi 2 Te 3 phase only, by comparing energy dispersive X-ray spectroscopy, Raman spectroscopy and X-ray diffraction analysis. Variations of substrate temperature and deposition gas pressure prove to be crucial also for the control of film morphology and crystallinity. Substrate type has no influence on film stoichiometry and crystallinity, but highly oriented growth can be achieved on mica due to van der Waals epitaxy.

AB - Bi 2 Te 3 is one of the most used materials for thermoelectric applications at ambient temperature. An improvement of thermoelectric performances through a suitable modification of electron and phonon transport mechanisms is predicted for low dimensional or nanostructured systems, but this requires a control of the material structure down to the nanoscale. We show that pulsed laser deposition provides control on film composition, phase and structure, necessary for a comprehension of the relationship between structure and thermoelectric properties. We have explored the role of deposition temperature, background inert gas type and pressure, laser fluence and target-to-substrate distance and we found the experimental condition ranges to obtain crystalline films containing the Bi 2 Te 3 phase only, by comparing energy dispersive X-ray spectroscopy, Raman spectroscopy and X-ray diffraction analysis. Variations of substrate temperature and deposition gas pressure prove to be crucial also for the control of film morphology and crystallinity. Substrate type has no influence on film stoichiometry and crystallinity, but highly oriented growth can be achieved on mica due to van der Waals epitaxy.

KW - Bi Te

KW - Pulsed laser deposition (PLD)

KW - Raman spectroscopy

KW - Thermoelectric thin films

KW - X-ray diffraction

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JO - Applied Surface Science

JF - Applied Surface Science

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Pulsed laser deposition of Bi 2 Te 3 thermoelectric films

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Keywords

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Pulsed laser deposition of Bi ₂ Te ₃ thermoelectric films