The morphology of several dielectrics (a-SiO2, CaF2 and BaF2) irradiated by laser light at a wavelength of 790 nm for different pulse widths (between 200 fs and 5 ps) and fluences near the single shot damage threshold has been investigated by using the complementary techniques of electron microscopy and atomic force microscopy. Differences can be observed which we relate to the mechanisms and dynamics of defect production in these wide band gap materials.
|Number of pages||5|
|Journal||Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms|
|State||Published - Feb 1997|