Pulse-width influence on laser structuring of dielectrics

D. Ashkenasi; H. Varel; A. Rosenfeld; F. Noack; E. E.B. Campbell

doi:10.1016/S0168-583X(96)00563-0

Pulse-width influence on laser structuring of dielectrics

D. Ashkenasi, H. Varel, A. Rosenfeld, F. Noack, E. E.B. Campbell

Department of Physics

Research output: Contribution to journal › Article › peer-review

44 Scopus citations

Abstract

The morphology of several dielectrics (a-SiO₂, CaF₂ and BaF₂) irradiated by laser light at a wavelength of 790 nm for different pulse widths (between 200 fs and 5 ps) and fluences near the single shot damage threshold has been investigated by using the complementary techniques of electron microscopy and atomic force microscopy. Differences can be observed which we relate to the mechanisms and dynamics of defect production in these wide band gap materials.

Original language	English
Pages (from-to)	359-363
Number of pages	5
Journal	Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume	122
Issue number	3
DOIs	https://doi.org/10.1016/S0168-583X(96)00563-0
State	Published - Feb 1997

Bibliographical note

Funding Information:
We would like to thankP rof. I.V. Hertel (MBI, Berlin), Prof. E. Matthias (FU Berlin) and Dr. T. Boeck (IKZ, Berlin) for useful discussions. Financial support by the Bundesministeriumf ur Bildung, Wissenschaft, Forschung und Technologie (BMBF) through Grant 13N6591/I (PROBE) is gratefully acknowledged.

Access to Document

10.1016/S0168-583X(96)00563-0

Cite this

@article{8b9135fecf4449d1adb50a5463866bc1,

title = "Pulse-width influence on laser structuring of dielectrics",

abstract = "The morphology of several dielectrics (a-SiO2, CaF2 and BaF2) irradiated by laser light at a wavelength of 790 nm for different pulse widths (between 200 fs and 5 ps) and fluences near the single shot damage threshold has been investigated by using the complementary techniques of electron microscopy and atomic force microscopy. Differences can be observed which we relate to the mechanisms and dynamics of defect production in these wide band gap materials.",

author = "D. Ashkenasi and H. Varel and A. Rosenfeld and F. Noack and Campbell, {E. E.B.}",

note = "Funding Information: We would like to thankP rof. I.V. Hertel (MBI, Berlin), Prof. E. Matthias (FU Berlin) and Dr. T. Boeck (IKZ, Berlin) for useful discussions. Financial support by the Bundesministeriumf ur Bildung, Wissenschaft, Forschung und Technologie (BMBF) through Grant 13N6591/I (PROBE) is gratefully acknowledged.",

year = "1997",

month = feb,

doi = "10.1016/S0168-583X(96)00563-0",

language = "English",

volume = "122",

pages = "359--363",

journal = "Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms",

issn = "0168-583X",

publisher = "Elsevier",

number = "3",

}

TY - JOUR

T1 - Pulse-width influence on laser structuring of dielectrics

AU - Ashkenasi, D.

AU - Varel, H.

AU - Rosenfeld, A.

AU - Noack, F.

AU - Campbell, E. E.B.

N1 - Funding Information: We would like to thankP rof. I.V. Hertel (MBI, Berlin), Prof. E. Matthias (FU Berlin) and Dr. T. Boeck (IKZ, Berlin) for useful discussions. Financial support by the Bundesministeriumf ur Bildung, Wissenschaft, Forschung und Technologie (BMBF) through Grant 13N6591/I (PROBE) is gratefully acknowledged.

PY - 1997/2

Y1 - 1997/2

N2 - The morphology of several dielectrics (a-SiO2, CaF2 and BaF2) irradiated by laser light at a wavelength of 790 nm for different pulse widths (between 200 fs and 5 ps) and fluences near the single shot damage threshold has been investigated by using the complementary techniques of electron microscopy and atomic force microscopy. Differences can be observed which we relate to the mechanisms and dynamics of defect production in these wide band gap materials.

AB - The morphology of several dielectrics (a-SiO2, CaF2 and BaF2) irradiated by laser light at a wavelength of 790 nm for different pulse widths (between 200 fs and 5 ps) and fluences near the single shot damage threshold has been investigated by using the complementary techniques of electron microscopy and atomic force microscopy. Differences can be observed which we relate to the mechanisms and dynamics of defect production in these wide band gap materials.

UR - http://www.scopus.com/inward/record.url?scp=0031546708&partnerID=8YFLogxK

U2 - 10.1016/S0168-583X(96)00563-0

DO - 10.1016/S0168-583X(96)00563-0

M3 - Article

AN - SCOPUS:0031546708

SN - 0168-583X

VL - 122

SP - 359

EP - 363

JO - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

JF - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

IS - 3

ER -

Pulse-width influence on laser structuring of dielectrics

Abstract

Bibliographical note

Access to Document

Fingerprint

Cite this