Pulse-width influence on laser structuring of dielectrics

D. Ashkenasi, H. Varel, A. Rosenfeld, F. Noack, E. E.B. Campbell

Research output: Contribution to journalArticlepeer-review

44 Scopus citations


The morphology of several dielectrics (a-SiO2, CaF2 and BaF2) irradiated by laser light at a wavelength of 790 nm for different pulse widths (between 200 fs and 5 ps) and fluences near the single shot damage threshold has been investigated by using the complementary techniques of electron microscopy and atomic force microscopy. Differences can be observed which we relate to the mechanisms and dynamics of defect production in these wide band gap materials.

Original languageEnglish
Pages (from-to)359-363
Number of pages5
JournalNuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Issue number3
StatePublished - Feb 1997

Bibliographical note

Funding Information:
We would like to thankP rof. I.V. Hertel (MBI, Berlin), Prof. E. Matthias (FU Berlin) and Dr. T. Boeck (IKZ, Berlin) for useful discussions. Financial support by the Bundesministeriumf ur Bildung, Wissenschaft, Forschung und Technologie (BMBF) through Grant 13N6591/I (PROBE) is gratefully acknowledged.


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