Pulse-programming instabilities of unipolar-type niox

Deok Kee Kim; Dong Seok Suh; Jucheol Park

doi:10.1109/LED.2010.2045873

Pulse-programming instabilities of unipolar-type niox

Deok Kee Kim, Dong Seok Suh, Jucheol Park

Department of Physics

Research output: Contribution to journal › Article › peer-review

23 Scopus citations

Abstract

Oscillations in the transient current profiles of NiO_x resistive switching memory during set and reset pulse programming were observed and explained by the repeated threshold switching (instantaneous set/reset programming) due to the unstably applied voltage on the resistive random access memory cell during switching. Adding a feedback circuit to prevent the observed oscillations as well as limiting the parasitic capacitance are needed for stable unipolar resistive memory switching.

Original language	English
Article number	5447631
Pages (from-to)	600-602
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	31
Issue number	6
DOIs	https://doi.org/10.1109/LED.2010.2045873
State	Published - Jun 2010

Keywords

NiO
Pulse programming
Resistive random access memory (ReRAM)

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10.1109/LED.2010.2045873

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abstract = "Oscillations in the transient current profiles of NiOx resistive switching memory during set and reset pulse programming were observed and explained by the repeated threshold switching (instantaneous set/reset programming) due to the unstably applied voltage on the resistive random access memory cell during switching. Adding a feedback circuit to prevent the observed oscillations as well as limiting the parasitic capacitance are needed for stable unipolar resistive memory switching.",

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AB - Oscillations in the transient current profiles of NiOx resistive switching memory during set and reset pulse programming were observed and explained by the repeated threshold switching (instantaneous set/reset programming) due to the unstably applied voltage on the resistive random access memory cell during switching. Adding a feedback circuit to prevent the observed oscillations as well as limiting the parasitic capacitance are needed for stable unipolar resistive memory switching.

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Pulse-programming instabilities of unipolar-type niox

Abstract

Keywords

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