Pulse-programming instabilities of unipolar-type niox

Deok Kee Kim, Dong Seok Suh, Jucheol Park

Research output: Contribution to journalArticlepeer-review

23 Scopus citations


Oscillations in the transient current profiles of NiOx resistive switching memory during set and reset pulse programming were observed and explained by the repeated threshold switching (instantaneous set/reset programming) due to the unstably applied voltage on the resistive random access memory cell during switching. Adding a feedback circuit to prevent the observed oscillations as well as limiting the parasitic capacitance are needed for stable unipolar resistive memory switching.

Original languageEnglish
Article number5447631
Pages (from-to)600-602
Number of pages3
JournalIEEE Electron Device Letters
Issue number6
StatePublished - Jun 2010


  • NiO
  • Pulse programming
  • Resistive random access memory (ReRAM)


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