Pulse area dependent gradual resistance switching characteristics of CMOS compatible SiNx-based resistive memory

Min Hwi Kim; Sungjun Kim; Suhyun Bang; Tae Hyeon Kim; Dong Keun Lee; Seongjae Cho; Jong Ho Lee; Byung Gook Park

doi:10.1016/j.sse.2017.03.015

Pulse area dependent gradual resistance switching characteristics of CMOS compatible SiN_x-based resistive memory

Min Hwi Kim, Sungjun Kim, Suhyun Bang, Tae Hyeon Kim, Dong Keun Lee, Seongjae Cho, Jong Ho Lee, Byung Gook Park

Electronic and Electrical Engineering

Research output: Contribution to journal › Article › peer-review

11 Scopus citations

Abstract

In this work, we investigated the gradual resistance switching phenomenon of our fabricated silicon nitride-based bipolar RRAM. By positive (set) and negative (reset) pulses applied between top electrode (TE) and bottom electrode (BE), the resistance state of the RRAM cell was delicately controlled. We checked the effect of pulse width, rise and fall time and pulse amplitude on the change of the resistance state. In conclusion, it is demonstrated that change of resistance state is determined by applied pulse area above a certain threshold voltage. The memory cell and gradual resistance change characteristics would be used to implement accurate and reliable synaptic devices in low power neuromorphic system.

Original language	English
Pages (from-to)	109-114
Number of pages	6
Journal	Solid-State Electronics
Volume	132
DOIs	https://doi.org/10.1016/j.sse.2017.03.015
State	Published - 1 Jun 2017

Bibliographical note

Publisher Copyright:
© 2017 Elsevier Ltd

Keywords

Gradual resistance switching
Pulse operation
RRAM
Synaptic device

Access to Document

10.1016/j.sse.2017.03.015

Cite this

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title = "Pulse area dependent gradual resistance switching characteristics of CMOS compatible SiNx-based resistive memory",

abstract = "In this work, we investigated the gradual resistance switching phenomenon of our fabricated silicon nitride-based bipolar RRAM. By positive (set) and negative (reset) pulses applied between top electrode (TE) and bottom electrode (BE), the resistance state of the RRAM cell was delicately controlled. We checked the effect of pulse width, rise and fall time and pulse amplitude on the change of the resistance state. In conclusion, it is demonstrated that change of resistance state is determined by applied pulse area above a certain threshold voltage. The memory cell and gradual resistance change characteristics would be used to implement accurate and reliable synaptic devices in low power neuromorphic system.",

keywords = "Gradual resistance switching, Pulse operation, RRAM, Synaptic device",

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T1 - Pulse area dependent gradual resistance switching characteristics of CMOS compatible SiNx-based resistive memory

AU - Kim, Min Hwi

AU - Kim, Sungjun

AU - Bang, Suhyun

AU - Kim, Tae Hyeon

AU - Lee, Dong Keun

AU - Cho, Seongjae

AU - Lee, Jong Ho

AU - Park, Byung Gook

PY - 2017/6/1

Y1 - 2017/6/1

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AB - In this work, we investigated the gradual resistance switching phenomenon of our fabricated silicon nitride-based bipolar RRAM. By positive (set) and negative (reset) pulses applied between top electrode (TE) and bottom electrode (BE), the resistance state of the RRAM cell was delicately controlled. We checked the effect of pulse width, rise and fall time and pulse amplitude on the change of the resistance state. In conclusion, it is demonstrated that change of resistance state is determined by applied pulse area above a certain threshold voltage. The memory cell and gradual resistance change characteristics would be used to implement accurate and reliable synaptic devices in low power neuromorphic system.

KW - Gradual resistance switching

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