Pseudomorphic InyGa1-yAs/GaAs/AlxGa 1-xAs single quantum well surface-emitting lasers with integrated 45°beam deflectors

Jae Hoon Kim; Anders Larsson; Luke P. Lee

doi:10.1063/1.104451

Pseudomorphic In_yGa_1-yAs/GaAs/Al_xGa _1-xAs single quantum well surface-emitting lasers with integrated 45°beam deflectors

Jae Hoon Kim
, Anders Larsson
, Luke P. Lee

Department of Chemistry & Nanoscience

Research output: Contribution to journal › Article › peer-review

13 Scopus citations

Abstract

We report on the first demonstration of pseudomorphic InGaAs single quantum well surface-emitting lasers (SELs), with etched vertical mirrors and integrated 45°beam deflectors fabricated by ion beam etching. 100-μm-wide broad-area SELs exhibited a threshold current of 320 mA, a total power of 126 mW, and a total external differential quantum efficiency of 0.09 W/A for a 500-μm-long cavity. The perpendicular far-field pattern of broad-area SELs showed a full width at half maximum of ∼20°. The lasers with various types of cavities fabricated from the same wafer were compared. Broad-area edge-emitting lasers had a threshold current of 200 mA, a total power of 700 mW, and a total external differential quantum efficiency of 0.52 W/A.

Original language	English
Pages (from-to)	7-9
Number of pages	3
Journal	Applied Physics Letters
Volume	58
Issue number	1
DOIs	https://doi.org/10.1063/1.104451
State	Published - 1991

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title = "Pseudomorphic InyGa1-yAs/GaAs/AlxGa 1-xAs single quantum well surface-emitting lasers with integrated 45°beam deflectors",

abstract = "We report on the first demonstration of pseudomorphic InGaAs single quantum well surface-emitting lasers (SELs), with etched vertical mirrors and integrated 45°beam deflectors fabricated by ion beam etching. 100-μm-wide broad-area SELs exhibited a threshold current of 320 mA, a total power of 126 mW, and a total external differential quantum efficiency of 0.09 W/A for a 500-μm-long cavity. The perpendicular far-field pattern of broad-area SELs showed a full width at half maximum of ∼20°. The lasers with various types of cavities fabricated from the same wafer were compared. Broad-area edge-emitting lasers had a threshold current of 200 mA, a total power of 700 mW, and a total external differential quantum efficiency of 0.52 W/A.",

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journal = "Applied Physics Letters",

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AU - Kim, Jae Hoon

AU - Larsson, Anders

AU - Lee, Luke P.

PY - 1991

Y1 - 1991

N2 - We report on the first demonstration of pseudomorphic InGaAs single quantum well surface-emitting lasers (SELs), with etched vertical mirrors and integrated 45°beam deflectors fabricated by ion beam etching. 100-μm-wide broad-area SELs exhibited a threshold current of 320 mA, a total power of 126 mW, and a total external differential quantum efficiency of 0.09 W/A for a 500-μm-long cavity. The perpendicular far-field pattern of broad-area SELs showed a full width at half maximum of ∼20°. The lasers with various types of cavities fabricated from the same wafer were compared. Broad-area edge-emitting lasers had a threshold current of 200 mA, a total power of 700 mW, and a total external differential quantum efficiency of 0.52 W/A.

AB - We report on the first demonstration of pseudomorphic InGaAs single quantum well surface-emitting lasers (SELs), with etched vertical mirrors and integrated 45°beam deflectors fabricated by ion beam etching. 100-μm-wide broad-area SELs exhibited a threshold current of 320 mA, a total power of 126 mW, and a total external differential quantum efficiency of 0.09 W/A for a 500-μm-long cavity. The perpendicular far-field pattern of broad-area SELs showed a full width at half maximum of ∼20°. The lasers with various types of cavities fabricated from the same wafer were compared. Broad-area edge-emitting lasers had a threshold current of 200 mA, a total power of 700 mW, and a total external differential quantum efficiency of 0.52 W/A.

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JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 1

ER -

Pseudomorphic InyGa1-yAs/GaAs/AlxGa 1-xAs single quantum well surface-emitting lasers with integrated 45°beam deflectors

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Pseudomorphic In_yGa_1-yAs/GaAs/Al_xGa _1-xAs single quantum well surface-emitting lasers with integrated 45°beam deflectors