Proximity Engineering of the van der Waals Interaction in Multilayered Graphene

Sera Kim, Jongho Park, Dinh Loc Duong, Suyeon Cho, Sung Wng Kim, Heejun Yang

Research output: Contribution to journalArticlepeer-review

11 Scopus citations


The van der Waals (vdW) interaction in two-dimensional (2D)-layered materials affects key characteristics of electronic devices, such as the contact resistance, with a vertical heterostructure geometry. While various functionalizations to manipulate the properties of 2D materials have shown issues such as defect generation or have a limited spatial range for the methods, engineering the vdW interaction in nondestructive ways for device applications has not been tried or properly achieved yet. Here, we introduce the proximity engineering of the vdW interaction in multilayered graphene, which is observed as modified interlayer distances and deviated stacking orders by Raman spectroscopy. A 2D electride, [Ca2N]+·e-, possessing a low-work function of 2.6 eV, was used to trigger an avalanche of electrons over tens of graphene layers, exceeding the conventional spatial-range limit (∼1 nm) by screening with a carrier density of 1014 cm-2. Our proximity engineering reduces the vdW interaction in a nondestructive way and achieves a promising graphene-metal contact resistance of 500 ω·μm without using complicated edge contacts, which demonstrates a way to use moderately decoupled graphene layers for device applications.

Original languageEnglish
JournalACS Applied Materials and Interfaces
StatePublished - 2019

Bibliographical note

Publisher Copyright:
© 2019 American Chemical Society.


  • contact resistance
  • electride
  • multilayered graphene
  • proximity engineering
  • van der Waals interaction


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