Polycrystalline La0.7Sr0.3MnO3 (LSMO) thin films were grown on GaN layers by pulsed laser deposition. High quality LSMO films could be prepared without the aid of buffer layers. Ferromagnetic transition temperature of a 500 Å thick LSMO/GaN film was as high as 330 K and coercive field was less than 20 Oe at room temperature. Current-voltage measurements of LSMO/GaN contacts showed a clear rectifying behavior, which might be caused by Schottky barrier formation at the interfaces. The LSMO/GaN hybrid can be a candidate for spin-injectors, which will be useful for room temperature and low field applications.
- A. Magnetic films and multilayers
- A. Semiconductors
- D. Electronic transport