Properties of La0.7Sr0.3MnO3 thin films grown on gallium nitrides

D. W. Kim, D. H. Kim, T. W. Noh, E. Oh, H. C. Kim, H. C. Lee

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4 Scopus citations


Polycrystalline La0.7Sr0.3MnO3 (LSMO) thin films were grown on GaN layers by pulsed laser deposition. High quality LSMO films could be prepared without the aid of buffer layers. Ferromagnetic transition temperature of a 500 Å thick LSMO/GaN film was as high as 330 K and coercive field was less than 20 Oe at room temperature. Current-voltage measurements of LSMO/GaN contacts showed a clear rectifying behavior, which might be caused by Schottky barrier formation at the interfaces. The LSMO/GaN hybrid can be a candidate for spin-injectors, which will be useful for room temperature and low field applications.

Original languageEnglish
Pages (from-to)631-634
Number of pages4
JournalSolid State Communications
Issue number11
StatePublished - 14 Mar 2002

Bibliographical note

Funding Information:
This work was financially supported by MOST through the Creative Research Initiative Program and National Program for Tera-level Nanodevices as one of the 21st century Frontier Programs. Works at Korea Basic Science Institute were supported by National Research Laboratory project of MOST.


  • A. Magnetic films and multilayers
  • A. Semiconductors
  • D. Electronic transport


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