Properties of La0.7Sr0.3MnO3 thin films grown on gallium nitrides

D. W. Kim; D. H. Kim; T. W. Noh; E. Oh; H. C. Kim; H. C. Lee

doi:10.1016/S0038-1098(02)00033-9

Properties of La_0.7Sr_0.3MnO₃ thin films grown on gallium nitrides

D. W. Kim, D. H. Kim, T. W. Noh, E. Oh, H. C. Kim, H. C. Lee

Department of Physics

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

Polycrystalline La_0.7Sr_0.3MnO₃ (LSMO) thin films were grown on GaN layers by pulsed laser deposition. High quality LSMO films could be prepared without the aid of buffer layers. Ferromagnetic transition temperature of a 500 Å thick LSMO/GaN film was as high as 330 K and coercive field was less than 20 Oe at room temperature. Current-voltage measurements of LSMO/GaN contacts showed a clear rectifying behavior, which might be caused by Schottky barrier formation at the interfaces. The LSMO/GaN hybrid can be a candidate for spin-injectors, which will be useful for room temperature and low field applications.

Original language	English
Pages (from-to)	631-634
Number of pages	4
Journal	Solid State Communications
Volume	121
Issue number	11
DOIs	https://doi.org/10.1016/S0038-1098(02)00033-9
State	Published - 14 Mar 2002

Bibliographical note

Funding Information:
This work was financially supported by MOST through the Creative Research Initiative Program and National Program for Tera-level Nanodevices as one of the 21st century Frontier Programs. Works at Korea Basic Science Institute were supported by National Research Laboratory project of MOST.

Keywords

A. Magnetic films and multilayers
A. Semiconductors
D. Electronic transport

Access to Document

10.1016/S0038-1098(02)00033-9

Cite this

@article{5907ea9a0dcc4370be26316138137263,

title = "Properties of La0.7Sr0.3MnO3 thin films grown on gallium nitrides",

abstract = "Polycrystalline La0.7Sr0.3MnO3 (LSMO) thin films were grown on GaN layers by pulsed laser deposition. High quality LSMO films could be prepared without the aid of buffer layers. Ferromagnetic transition temperature of a 500 {\AA} thick LSMO/GaN film was as high as 330 K and coercive field was less than 20 Oe at room temperature. Current-voltage measurements of LSMO/GaN contacts showed a clear rectifying behavior, which might be caused by Schottky barrier formation at the interfaces. The LSMO/GaN hybrid can be a candidate for spin-injectors, which will be useful for room temperature and low field applications.",

keywords = "A. Magnetic films and multilayers, A. Semiconductors, D. Electronic transport",

author = "Kim, {D. W.} and Kim, {D. H.} and Noh, {T. W.} and E. Oh and Kim, {H. C.} and Lee, {H. C.}",

note = "Funding Information: This work was financially supported by MOST through the Creative Research Initiative Program and National Program for Tera-level Nanodevices as one of the 21st century Frontier Programs. Works at Korea Basic Science Institute were supported by National Research Laboratory project of MOST.",

year = "2002",

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doi = "10.1016/S0038-1098(02)00033-9",

language = "English",

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journal = "Solid State Communications",

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TY - JOUR

T1 - Properties of La0.7Sr0.3MnO3 thin films grown on gallium nitrides

AU - Kim, D. W.

AU - Kim, D. H.

AU - Noh, T. W.

AU - Oh, E.

AU - Kim, H. C.

AU - Lee, H. C.

N1 - Funding Information: This work was financially supported by MOST through the Creative Research Initiative Program and National Program for Tera-level Nanodevices as one of the 21st century Frontier Programs. Works at Korea Basic Science Institute were supported by National Research Laboratory project of MOST.

PY - 2002/3/14

Y1 - 2002/3/14

N2 - Polycrystalline La0.7Sr0.3MnO3 (LSMO) thin films were grown on GaN layers by pulsed laser deposition. High quality LSMO films could be prepared without the aid of buffer layers. Ferromagnetic transition temperature of a 500 Å thick LSMO/GaN film was as high as 330 K and coercive field was less than 20 Oe at room temperature. Current-voltage measurements of LSMO/GaN contacts showed a clear rectifying behavior, which might be caused by Schottky barrier formation at the interfaces. The LSMO/GaN hybrid can be a candidate for spin-injectors, which will be useful for room temperature and low field applications.

AB - Polycrystalline La0.7Sr0.3MnO3 (LSMO) thin films were grown on GaN layers by pulsed laser deposition. High quality LSMO films could be prepared without the aid of buffer layers. Ferromagnetic transition temperature of a 500 Å thick LSMO/GaN film was as high as 330 K and coercive field was less than 20 Oe at room temperature. Current-voltage measurements of LSMO/GaN contacts showed a clear rectifying behavior, which might be caused by Schottky barrier formation at the interfaces. The LSMO/GaN hybrid can be a candidate for spin-injectors, which will be useful for room temperature and low field applications.

KW - A. Magnetic films and multilayers

KW - A. Semiconductors

KW - D. Electronic transport

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U2 - 10.1016/S0038-1098(02)00033-9

DO - 10.1016/S0038-1098(02)00033-9

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EP - 634

JO - Solid State Communications

JF - Solid State Communications

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