Amorphous indium-gallium-zinc-oxide (a-IGZO) thin films were prepared using the facing targets sputtering (FTS) method as a function of input power at room temperature. The a-IGZO films were used a channel layer for thin film transistors (TFTs). The electrical, optical, and structural properties of a-IGZO thin films were measured by Hall Effect measurement, UV/vis spectrometer and X-ray diffractometer. The performance and device characteristics of the a-IGZO TFTs were measured by using a semiconductor parameter analyzer. The transfer characteristics of a-IGZO TFTs exhibited saturation mobility of 10.83 cm 2/V s and threshold voltage of 5.13 V.
Bibliographical noteFunding Information:
This work was supported by the Human Resources Development of the Korea Institute of Energy Technology Evaluation and Planning (KETEP) grant funded by the Korea government Ministry of Knowledge Economy (no. 20104010100510 ). This work was supported by Kyungwon University Research Fund in 2011.
- C. Electrical properties
- Facing targets sputtering
- Thin film transistor