Abstract
Amorphous indium-gallium-zinc-oxide (a-IGZO) thin films were prepared using the facing targets sputtering (FTS) method as a function of input power at room temperature. The a-IGZO films were used a channel layer for thin film transistors (TFTs). The electrical, optical, and structural properties of a-IGZO thin films were measured by Hall Effect measurement, UV/vis spectrometer and X-ray diffractometer. The performance and device characteristics of the a-IGZO TFTs were measured by using a semiconductor parameter analyzer. The transfer characteristics of a-IGZO TFTs exhibited saturation mobility of 10.83 cm 2/V s and threshold voltage of 5.13 V.
Original language | English |
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Pages (from-to) | S601-S604 |
Journal | Ceramics International |
Volume | 38 |
Issue number | SUPPL. 1 |
DOIs | |
State | Published - Jan 2012 |
Keywords
- C. Electrical properties
- Facing targets sputtering
- In-Ga-Zn-O
- Thin film transistor