Properties of In-Ga-Zn-O thin films for thin film transistor channel layer prepared by facing targets sputtering method

Yu Sup Jung; Kyu Ho Lee; Woo Jae Kim; Won Jae Lee; Hyung Wook Choi; Kyung Hwan Kim

doi:10.1016/j.ceramint.2011.05.106

Properties of In-Ga-Zn-O thin films for thin film transistor channel layer prepared by facing targets sputtering method

Yu Sup Jung, Kyu Ho Lee, Woo Jae Kim, Won Jae Lee, Hyung Wook Choi, Kyung Hwan Kim

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

Amorphous indium-gallium-zinc-oxide (a-IGZO) thin films were prepared using the facing targets sputtering (FTS) method as a function of input power at room temperature. The a-IGZO films were used a channel layer for thin film transistors (TFTs). The electrical, optical, and structural properties of a-IGZO thin films were measured by Hall Effect measurement, UV/vis spectrometer and X-ray diffractometer. The performance and device characteristics of the a-IGZO TFTs were measured by using a semiconductor parameter analyzer. The transfer characteristics of a-IGZO TFTs exhibited saturation mobility of 10.83 cm ²/V s and threshold voltage of 5.13 V.

Original language	English
Pages (from-to)	S601-S604
Journal	Ceramics International
Volume	38
Issue number	SUPPL. 1
DOIs	https://doi.org/10.1016/j.ceramint.2011.05.106
State	Published - Jan 2012

Keywords

C. Electrical properties
Facing targets sputtering
In-Ga-Zn-O
Thin film transistor

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10.1016/j.ceramint.2011.05.106

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@article{cb64cf52b56148b5bbbbe969e43993b4,

title = "Properties of In-Ga-Zn-O thin films for thin film transistor channel layer prepared by facing targets sputtering method",

abstract = "Amorphous indium-gallium-zinc-oxide (a-IGZO) thin films were prepared using the facing targets sputtering (FTS) method as a function of input power at room temperature. The a-IGZO films were used a channel layer for thin film transistors (TFTs). The electrical, optical, and structural properties of a-IGZO thin films were measured by Hall Effect measurement, UV/vis spectrometer and X-ray diffractometer. The performance and device characteristics of the a-IGZO TFTs were measured by using a semiconductor parameter analyzer. The transfer characteristics of a-IGZO TFTs exhibited saturation mobility of 10.83 cm 2/V s and threshold voltage of 5.13 V.",

keywords = "C. Electrical properties, Facing targets sputtering, In-Ga-Zn-O, Thin film transistor",

author = "Jung, {Yu Sup} and Lee, {Kyu Ho} and Kim, {Woo Jae} and Lee, {Won Jae} and Choi, {Hyung Wook} and Kim, {Kyung Hwan}",

note = "Funding Information: This work was supported by the Human Resources Development of the Korea Institute of Energy Technology Evaluation and Planning (KETEP) grant funded by the Korea government Ministry of Knowledge Economy (no. 20104010100510 ). This work was supported by Kyungwon University Research Fund in 2011.",

year = "2012",

month = jan,

doi = "10.1016/j.ceramint.2011.05.106",

language = "English",

volume = "38",

pages = "S601--S604",

journal = "Ceramics International",

issn = "0272-8842",

publisher = "Elsevier Ltd.",

number = "SUPPL. 1",

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TY - JOUR

T1 - Properties of In-Ga-Zn-O thin films for thin film transistor channel layer prepared by facing targets sputtering method

AU - Jung, Yu Sup

AU - Lee, Kyu Ho

AU - Kim, Woo Jae

AU - Lee, Won Jae

AU - Choi, Hyung Wook

AU - Kim, Kyung Hwan

N1 - Funding Information: This work was supported by the Human Resources Development of the Korea Institute of Energy Technology Evaluation and Planning (KETEP) grant funded by the Korea government Ministry of Knowledge Economy (no. 20104010100510 ). This work was supported by Kyungwon University Research Fund in 2011.

PY - 2012/1

Y1 - 2012/1

N2 - Amorphous indium-gallium-zinc-oxide (a-IGZO) thin films were prepared using the facing targets sputtering (FTS) method as a function of input power at room temperature. The a-IGZO films were used a channel layer for thin film transistors (TFTs). The electrical, optical, and structural properties of a-IGZO thin films were measured by Hall Effect measurement, UV/vis spectrometer and X-ray diffractometer. The performance and device characteristics of the a-IGZO TFTs were measured by using a semiconductor parameter analyzer. The transfer characteristics of a-IGZO TFTs exhibited saturation mobility of 10.83 cm 2/V s and threshold voltage of 5.13 V.

AB - Amorphous indium-gallium-zinc-oxide (a-IGZO) thin films were prepared using the facing targets sputtering (FTS) method as a function of input power at room temperature. The a-IGZO films were used a channel layer for thin film transistors (TFTs). The electrical, optical, and structural properties of a-IGZO thin films were measured by Hall Effect measurement, UV/vis spectrometer and X-ray diffractometer. The performance and device characteristics of the a-IGZO TFTs were measured by using a semiconductor parameter analyzer. The transfer characteristics of a-IGZO TFTs exhibited saturation mobility of 10.83 cm 2/V s and threshold voltage of 5.13 V.

KW - C. Electrical properties

KW - Facing targets sputtering

KW - In-Ga-Zn-O

KW - Thin film transistor

UR - http://www.scopus.com/inward/record.url?scp=84655163929&partnerID=8YFLogxK

U2 - 10.1016/j.ceramint.2011.05.106

DO - 10.1016/j.ceramint.2011.05.106

M3 - Article

AN - SCOPUS:84655163929

SN - 0272-8842

VL - 38

SP - S601-S604

JO - Ceramics International

JF - Ceramics International

IS - SUPPL. 1

ER -

Properties of In-Ga-Zn-O thin films for thin film transistor channel layer prepared by facing targets sputtering method

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Keywords

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