Properties of GAZO/Ag/GAZO multilayer films prepared by FTS system

Yu Sup Jung; Woo Jae Kim; Hyung Wook Choi; Kyung Hwan Kim

doi:10.1016/j.mee.2011.02.071

Properties of GAZO/Ag/GAZO multilayer films prepared by FTS system

Yu Sup Jung, Woo Jae Kim, Hyung Wook Choi, Kyung Hwan Kim

Department of Chemical Engineering & Materials Science

Research output: Contribution to journal › Article › peer-review

11 Scopus citations

Abstract

GAZO (Ga-Al doped ZnO)/Ag/GAZO multilayer films were prepared by Facing Target Sputtering (FTS) methods at room temperature. The GAZO multilayer films consisted of various thickness Ag and top GAZO thin film. The electrical, optical and structural properties of the films were investigated using a four-point probe, an UV/vis spectrometer, a X-ray diffractometer (XRD), a field emission scanning electron microscope (FE-SEM) and atomic force microscopy (AFM). For the multilayer film with top and bottom GAZO thickness of 50 nm and intermediate Ag thickness of 12 nm, it exhibits the maximum figure of merit of 73.05 × 10^-3 ^-1 with sheet resistance of 9.1 /sq and transmittance of 96.4% at wavelength of 550 nm.

Original language	English
Pages (from-to)	124-128
Number of pages	5
Journal	Microelectronic Engineering
Volume	89
Issue number	1
DOIs	https://doi.org/10.1016/j.mee.2011.02.071
State	Published - Jan 2012

Bibliographical note

Funding Information:
This work was supported by the Human Resources Development of the Korea Institute of Energy Technology Evaluation and Planning (KETEP) grant funded by the Korea Government Ministry of Knowledge Economy (No. 20104010100510 ). This work was supported by Kyungwon University Fund in 2011.

Keywords

FTS
Ga-Al doped ZnO
GAZO/Ag/GAZO
Multilayer

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10.1016/j.mee.2011.02.071

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@article{2f4345686ede4966a9d8de18a355327b,

title = "Properties of GAZO/Ag/GAZO multilayer films prepared by FTS system",

abstract = "GAZO (Ga-Al doped ZnO)/Ag/GAZO multilayer films were prepared by Facing Target Sputtering (FTS) methods at room temperature. The GAZO multilayer films consisted of various thickness Ag and top GAZO thin film. The electrical, optical and structural properties of the films were investigated using a four-point probe, an UV/vis spectrometer, a X-ray diffractometer (XRD), a field emission scanning electron microscope (FE-SEM) and atomic force microscopy (AFM). For the multilayer film with top and bottom GAZO thickness of 50 nm and intermediate Ag thickness of 12 nm, it exhibits the maximum figure of merit of 73.05 × 10-3 -1 with sheet resistance of 9.1 /sq and transmittance of 96.4% at wavelength of 550 nm.",

keywords = "FTS, Ga-Al doped ZnO, GAZO/Ag/GAZO, Multilayer",

author = "Jung, {Yu Sup} and Kim, {Woo Jae} and Choi, {Hyung Wook} and Kim, {Kyung Hwan}",

note = "Funding Information: This work was supported by the Human Resources Development of the Korea Institute of Energy Technology Evaluation and Planning (KETEP) grant funded by the Korea Government Ministry of Knowledge Economy (No. 20104010100510 ). This work was supported by Kyungwon University Fund in 2011.",

year = "2012",

month = jan,

doi = "10.1016/j.mee.2011.02.071",

language = "English",

volume = "89",

pages = "124--128",

journal = "Microelectronic Engineering",

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AU - Jung, Yu Sup

AU - Kim, Woo Jae

AU - Choi, Hyung Wook

AU - Kim, Kyung Hwan

N1 - Funding Information: This work was supported by the Human Resources Development of the Korea Institute of Energy Technology Evaluation and Planning (KETEP) grant funded by the Korea Government Ministry of Knowledge Economy (No. 20104010100510 ). This work was supported by Kyungwon University Fund in 2011.

PY - 2012/1

Y1 - 2012/1

N2 - GAZO (Ga-Al doped ZnO)/Ag/GAZO multilayer films were prepared by Facing Target Sputtering (FTS) methods at room temperature. The GAZO multilayer films consisted of various thickness Ag and top GAZO thin film. The electrical, optical and structural properties of the films were investigated using a four-point probe, an UV/vis spectrometer, a X-ray diffractometer (XRD), a field emission scanning electron microscope (FE-SEM) and atomic force microscopy (AFM). For the multilayer film with top and bottom GAZO thickness of 50 nm and intermediate Ag thickness of 12 nm, it exhibits the maximum figure of merit of 73.05 × 10-3 -1 with sheet resistance of 9.1 /sq and transmittance of 96.4% at wavelength of 550 nm.

AB - GAZO (Ga-Al doped ZnO)/Ag/GAZO multilayer films were prepared by Facing Target Sputtering (FTS) methods at room temperature. The GAZO multilayer films consisted of various thickness Ag and top GAZO thin film. The electrical, optical and structural properties of the films were investigated using a four-point probe, an UV/vis spectrometer, a X-ray diffractometer (XRD), a field emission scanning electron microscope (FE-SEM) and atomic force microscopy (AFM). For the multilayer film with top and bottom GAZO thickness of 50 nm and intermediate Ag thickness of 12 nm, it exhibits the maximum figure of merit of 73.05 × 10-3 -1 with sheet resistance of 9.1 /sq and transmittance of 96.4% at wavelength of 550 nm.

KW - FTS

KW - Ga-Al doped ZnO

KW - GAZO/Ag/GAZO

KW - Multilayer

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DO - 10.1016/j.mee.2011.02.071

M3 - Article

AN - SCOPUS:81855166623

SN - 0167-9317

VL - 89

SP - 124

EP - 128

JO - Microelectronic Engineering

JF - Microelectronic Engineering

IS - 1

ER -

Properties of GAZO/Ag/GAZO multilayer films prepared by FTS system

Abstract

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Keywords

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