Properties of GAZO/Ag/GAZO multilayer films prepared by FTS system

Yu Sup Jung, Woo Jae Kim, Hyung Wook Choi, Kyung Hwan Kim

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11 Scopus citations


GAZO (Ga-Al doped ZnO)/Ag/GAZO multilayer films were prepared by Facing Target Sputtering (FTS) methods at room temperature. The GAZO multilayer films consisted of various thickness Ag and top GAZO thin film. The electrical, optical and structural properties of the films were investigated using a four-point probe, an UV/vis spectrometer, a X-ray diffractometer (XRD), a field emission scanning electron microscope (FE-SEM) and atomic force microscopy (AFM). For the multilayer film with top and bottom GAZO thickness of 50 nm and intermediate Ag thickness of 12 nm, it exhibits the maximum figure of merit of 73.05 × 10-3 -1 with sheet resistance of 9.1 /sq and transmittance of 96.4% at wavelength of 550 nm.

Original languageEnglish
Pages (from-to)124-128
Number of pages5
JournalMicroelectronic Engineering
Issue number1
StatePublished - Jan 2012

Bibliographical note

Funding Information:
This work was supported by the Human Resources Development of the Korea Institute of Energy Technology Evaluation and Planning (KETEP) grant funded by the Korea Government Ministry of Knowledge Economy (No. 20104010100510 ). This work was supported by Kyungwon University Fund in 2011.


  • FTS
  • Ga-Al doped ZnO
  • Multilayer


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