Properties of (Ba,Sr)TiO3 thin films prepared by liquid-source delivery chemical vapor deposition

D. C. Kim; W. Jo; H. M. Lee; K. Y. Kim

doi:10.1080/10584589708221694

Properties of (Ba,Sr)TiO₃ thin films prepared by liquid-source delivery chemical vapor deposition

D. C. Kim, W. Jo, H. M. Lee, K. Y. Kim

Department of Physics

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

(Ba,Sr)TiO₃ thin films were grown by liquid-source delivery chemical vapor deposition. Over a wide range of substrate temperature, the films were grown and their structural and electrical properties were investigated. Atomic ratio of Ba, Sr, and Ti is found to be strongly dependent on the substrate temperature. Electron microscopic studies show that surface roughness and step coverage of the films are also closely related to the substrate temperature. Dielectric constant and dissipation loss of the films were measured as 200 and 1 % over the frequency range of 100 Hz ∼ 1 MHz, respectively. To obtain a higher dielectric BST thin film, N₂O ambient gas was used during the deposition.

Original language	English
Pages (from-to)	137-144
Number of pages	8
Journal	Integrated Ferroelectrics
Volume	18
Issue number	1-4
DOIs	https://doi.org/10.1080/10584589708221694
State	Published - 1997

Keywords

BST thin films
Chemical vapor deposition
Liquid-source delivery
NO ambient gas
Substrate temperature

Access to Document

10.1080/10584589708221694

Cite this

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title = "Properties of (Ba,Sr)TiO3 thin films prepared by liquid-source delivery chemical vapor deposition",

abstract = "(Ba,Sr)TiO3 thin films were grown by liquid-source delivery chemical vapor deposition. Over a wide range of substrate temperature, the films were grown and their structural and electrical properties were investigated. Atomic ratio of Ba, Sr, and Ti is found to be strongly dependent on the substrate temperature. Electron microscopic studies show that surface roughness and step coverage of the films are also closely related to the substrate temperature. Dielectric constant and dissipation loss of the films were measured as 200 and 1 % over the frequency range of 100 Hz ∼ 1 MHz, respectively. To obtain a higher dielectric BST thin film, N2O ambient gas was used during the deposition.",

keywords = "BST thin films, Chemical vapor deposition, Liquid-source delivery, NO ambient gas, Substrate temperature",

author = "Kim, {D. C.} and W. Jo and Lee, {H. M.} and Kim, {K. Y.}",

year = "1997",

doi = "10.1080/10584589708221694",

language = "English",

volume = "18",

pages = "137--144",

journal = "Integrated Ferroelectrics",

issn = "1058-4587",

publisher = "Taylor and Francis Ltd.",

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TY - JOUR

T1 - Properties of (Ba,Sr)TiO3 thin films prepared by liquid-source delivery chemical vapor deposition

AU - Kim, D. C.

AU - Jo, W.

AU - Lee, H. M.

AU - Kim, K. Y.

PY - 1997

Y1 - 1997

N2 - (Ba,Sr)TiO3 thin films were grown by liquid-source delivery chemical vapor deposition. Over a wide range of substrate temperature, the films were grown and their structural and electrical properties were investigated. Atomic ratio of Ba, Sr, and Ti is found to be strongly dependent on the substrate temperature. Electron microscopic studies show that surface roughness and step coverage of the films are also closely related to the substrate temperature. Dielectric constant and dissipation loss of the films were measured as 200 and 1 % over the frequency range of 100 Hz ∼ 1 MHz, respectively. To obtain a higher dielectric BST thin film, N2O ambient gas was used during the deposition.

AB - (Ba,Sr)TiO3 thin films were grown by liquid-source delivery chemical vapor deposition. Over a wide range of substrate temperature, the films were grown and their structural and electrical properties were investigated. Atomic ratio of Ba, Sr, and Ti is found to be strongly dependent on the substrate temperature. Electron microscopic studies show that surface roughness and step coverage of the films are also closely related to the substrate temperature. Dielectric constant and dissipation loss of the films were measured as 200 and 1 % over the frequency range of 100 Hz ∼ 1 MHz, respectively. To obtain a higher dielectric BST thin film, N2O ambient gas was used during the deposition.

KW - BST thin films

KW - Chemical vapor deposition

KW - Liquid-source delivery

KW - NO ambient gas

KW - Substrate temperature

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U2 - 10.1080/10584589708221694

DO - 10.1080/10584589708221694

M3 - Article

AN - SCOPUS:11544304108

SN - 1058-4587

VL - 18

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EP - 144

JO - Integrated Ferroelectrics

JF - Integrated Ferroelectrics

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ER -