Program/erase model of nitride-based NAND-type charge trap flash memories
- Doo Hyun Kim
- , Seongjae Cho
- , Dong Hua Li
- , Jang Gn Yun
- , Jung Hoon Lee
- , Gil Sung Lee
- , Yoon Kim
- , Won Bo Shim
- , Se Hwan Park
- , Wandong Kim
- , Hyungcheol Shin
- , Byung Gook Park
Research output: Contribution to journal › Article › peer-review
26
Scopus
citations