@inproceedings{c4d044b6944b45d3b18d970381eb1fd3,
title = "Program efficiency relying on channel conditions at NOR-Type flash memory device based on silicon-on-insulator (SOI)",
abstract = "Various types of flash memory devices are fabricated on silicon-on-insulator (SOI) substrate for efficient isolation and higher program efficiency nowadays. Since metal-oxide-semiconductor field effect transistors (MOSFETs) on SOI has a floating body and corresponding effects, it is quite difficult to predict the program efficiency of SOI-based NOR-type flash memory device making use of channel hot electron injection (CHEI) mechanism in program operation. The program efficiency is hard to control by back substrate bias unlike bulk silicon-based memory device, either. In this work, the dependence of program efficiency for SOI-based NOR-type flash memory device on channel conditions with regard to SOI thickness and channel doping concentration is thoroughly investigated by numerical simulation.",
author = "Seongjae Cho and Park, {Il Han} and Lee, {Jung Hoon} and Lee, {Jong Duk} and Park, {Byung Gook}",
year = "2008",
doi = "10.1109/EDSSC.2008.4760667",
language = "English",
isbn = "9781424425402",
series = "2008 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC",
booktitle = "2008 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC",
note = "2008 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC ; Conference date: 08-12-2008 Through 10-12-2008",
}