TY - JOUR
T1 - Processing and characterization of ultra-thin poly-crystalline silicon for memory and logic applications
AU - Yu, Eunseon
AU - Kim, Youngmin
AU - Lee, Junsoo
AU - Cho, Yongbeom
AU - Lee, Won Jae
AU - Cho, Seongjae
N1 - Funding Information:
This research was supported by Nano?Material Technology Development Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Science, ICT and Future Planning (MSIP) (NRF-2016M3A7B4910348) and Mid-career Researcher Program through NRF funded by MSIP (NRF-2017R1A2B2011570). This work was also supported by the Ministry of Trade, Industry & Energy (MOTIE) (10080513) and Korea Semiconductor Research Consortium (KSRC) support program for the development of the future semiconductor devices.
Publisher Copyright:
© 2018, Institute of Electronics Engineers of Korea. All rights reserved.
PY - 2018/4
Y1 - 2018/4
N2 - In this work, processing and characterization of ultra-thin poly-Si are performed for memory and logic applications. Ultra-thin poly-Si layers with different thicknesses were prepared on the deposited oxide by low-pressure chemical vapor deposition (LPCVD). Deposited poly-Si were doped through POCl3 gas-phase doping at 900 °C, in which 10-nm thickness was reduced. Afterward, post-deposition annealing (PDA) under different conditions were performed. Thicknesses of deposited poly-Si films were 20, 30, and 50 nm. The following PDA improves the crystallinity, which has been confirmed by high-resolution transmission electron microscopy (HR-TEM) with fast Fourier transform (FFT) imaging and sheet resistivity lowering. Also, superior crystalline film is observed in the thinner film and the bi-directionally arranged domains are obtained from the 40-nm poly-Si film.
AB - In this work, processing and characterization of ultra-thin poly-Si are performed for memory and logic applications. Ultra-thin poly-Si layers with different thicknesses were prepared on the deposited oxide by low-pressure chemical vapor deposition (LPCVD). Deposited poly-Si were doped through POCl3 gas-phase doping at 900 °C, in which 10-nm thickness was reduced. Afterward, post-deposition annealing (PDA) under different conditions were performed. Thicknesses of deposited poly-Si films were 20, 30, and 50 nm. The following PDA improves the crystallinity, which has been confirmed by high-resolution transmission electron microscopy (HR-TEM) with fast Fourier transform (FFT) imaging and sheet resistivity lowering. Also, superior crystalline film is observed in the thinner film and the bi-directionally arranged domains are obtained from the 40-nm poly-Si film.
KW - Bi-directional domains
KW - Low-pressure chemical vapor deposition
KW - Post-deposition annealing
KW - Ultra-thin poly-Si
UR - http://www.scopus.com/inward/record.url?scp=85046457997&partnerID=8YFLogxK
U2 - 10.5573/JSTS.2018.18.2.172
DO - 10.5573/JSTS.2018.18.2.172
M3 - Article
AN - SCOPUS:85046457997
SN - 1598-1657
VL - 18
SP - 172
EP - 179
JO - Journal of Semiconductor Technology and Science
JF - Journal of Semiconductor Technology and Science
IS - 2
ER -